A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit technique

Yamamoto, Kazuya; Suzuki, Satoshi; Mori, K.; Asada, T.; Okuda, Takashi; Inoue, Akihisa; Miura, Takuya; Chomei, K.; Hattori, Reiji; Yamanouchi, M.; Shimura, Takaaki

doi:10.1109/4.859499

Cited by 49 publications

(18 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this paper we present protection circuits [2,3,4] that prevent over-voltage, and over-temperature conditions of the power transistor. An integrated voltage detector and temperature detector are used to monitor the collector peak voltage, and die temperature.…”

Section: Introductionmentioning

confidence: 99%

Ruggedness Improvement by Protection

Bezooijen

Graauw

Ruijs

et al. 2006

2006 Bipolar/BiCMOS Circuits and Technology Meeting

View full text Add to dashboard Cite

Cellular phone power amplifier transistors have to withstand extreme voltages, temperatures and currents. Requirements on IC and packaging technology are relaxed by using over-voltage and over-temperature protection. To avoid breakdown, protection circuits are used that detect the collector peak voltage and die temperature to limit the output power once a threshold level is crossed. For a supply voltage of 5 V and a nominal output power of 2 W, no breakdown is observed for a VSWR of 10 over all phases. For a VSWR of 4 and worst case mismatch phase the maximum die temperature is reduced from 143˚C to 112˚C when the output power is adaptively reduced from 32.1 dBm to 27.7 dBm.Index Terms -Adaptive control, avalanche breakdown, over-voltage protection, power amplifiers, temperature.

show abstract

Section: Introductionmentioning

confidence: 99%

Ruggedness Improvement by Protection

Bezooijen

Graauw

Ruijs

et al. 2006

2006 Bipolar/BiCMOS Circuits and Technology Meeting

View full text Add to dashboard Cite

show abstract

“…For instance, a proposed solution is the so-called PA with Manuscript unit selection (PA-US) [7]- [9]. This amplifier consists of several PAs (units) connected in parallel and optimized for each band, while the selection of the Unit (i.e., the band) is realized through power switches.…”

Section: Introductionmentioning

confidence: 99%

A Design Technique for Concurrent Dual-Band Harmonic Tuned Power Amplifier

Colantonio

Giannini

Giofrè

et al. 2008

IEEE Trans. Microwave Theory Techn.

123

View full text Add to dashboard Cite

In this paper, a novel technique to design concurrent dual-band high-efficiency harmonic tuned (HT) power amplifiers (PAs) is presented. The proposed approach is based on a methodology developed to design multifrequency passive matching networks, which allows concurrent operability. The network design criterion is heavily investigated and later generalized both from the theoretical and practical point of view. The design, realization, and the complete characterization of a concurrent dual-band high-efficiency HT PA is finally described. A 1-mm gate periphery GaN HEMT device was used for the design and realization of the PA operating concurrently at 2.45 and 3.3 GHz. The measurement results have shown 53% and 46% drain efficiency at 33-and 32.5-dBm output power in the two targeted bands if operated in continuous wave single mode. In concurrent mode, 35% average efficiency was achieved with two simultaneously applied orthogonal frequencydivision multiplexing signals.Index Terms-Dual band, harmonic matching, high efficiency, impedance buffer (IB), power amplifier (PA).

show abstract

“…As shown in Fig. 2, interstage matching circuits, bias circuits, and a band select switch [7] are integrated on the chip. Matching elements were determined based on source/ load-pull measurement results.…”

Section: Circuit Design a Amplijier Architecturementioning

confidence: 99%

“…2. Two amplifier solution in the same chip is adopted for the MMIC amplifier module architecture, because the solution allows each amplifier to be optimized independently for the bands of interest, and the incorporation of analog HBT switches onto the chip is difficult under a low-operating voltage condition [5,7]. As shown in Fig.…”

Section: Circuit Design a Amplijier Architecturementioning

confidence: 99%

“…The diode is utilized for the diode switch as a detailed description will be given later. The HBT features an emitter air-bridge structure with individual thermal shunt paths, thereby reducing thermal resistance of great importance for practical use [7], [ 113. The substrate thickness is as thin as 75 pm, and helps the reduction in the thermal resistance.…”

Section: Device Am) Process Descriptionmentioning

confidence: 99%

See 1 more Smart Citation

A GSM/EDGE dual-mode, 900/1800/1900-MHz triple-band HBT MMIC power amplifier module

Yamamoto

Asada

Suzuki

et al.

2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)

Self Cite

View full text Add to dashboard Cite

This paper describes a 3.5-V operation HBT MMIC power amplifier module for use in GSM/EDGE dual-mode, 900/1800/1900-MHz triple band handset applications. With diode switches and a band select switch built on the MMIC, the module delivers a Pout of 35.5 dBm and a PAE of about 50% for GSM900, a 33.4-dBm Pout and a 45% PAE for GSM 1800/1900. While satisfying an error vector magnitude (EVM) of less than 4% and a receive-band noise power of less than -83 dBm/100 kHz, the module also delivers a 29.5 dBm Pout and a PAE of over 25% for EDGE900, a 28.5 dBm Pout and a PAE of over 25% for EDGE1800/1900.

show abstract

A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit technique

Cited by 49 publications

References 42 publications

Ruggedness Improvement by Protection

Ruggedness Improvement by Protection

A Design Technique for Concurrent Dual-Band Harmonic Tuned Power Amplifier

A GSM/EDGE dual-mode, 900/1800/1900-MHz triple-band HBT MMIC power amplifier module

Contact Info

Product

Resources

About