A GSM/EDGE dual-mode, 900/1800/1900-MHz triple-band HBT MMIC power amplifier module

Yamamoto, Kazuya; Asada, T.; Suzuki, Satoshi; Miura, Takuya; Inoue, Akihisa; Miyakuni, S.; Otsuji, J.; Hattori, Reiji; Miyazaki, Yuji; Shimura, Takaaki

doi:10.1109/rfic.2002.1012041

Cited by 18 publications

(2 citation statements)

References 7 publications

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“…However, current multiband amplifiers are complex, and are therefore bulky and expensive. The most common circuit configurations for multiband amplifiers are 1) installing multiple PAs optimized for each band and selecting one using SPnT (Single-Pole-n-Throw) switches (SWs) at the input and the output ports [1] or 2) covering all the bands using a specially designed broadband load network [2]. In the former, the dual-band amplifier comprises two SPDT (Single-Pole-Double-Throw) SWs consisting of two SPST (Single-Pole-Single-Throw) SWs and two amplifier units.…”

Section: Introductionmentioning

confidence: 99%

Novel 900 MHz/1.9 GHz dual-mode power amplifier employing MEMS switches for optimum matching

Fukuda

Okumura

Hirota

et al. 2004

IEEE Microw. Wireless Compon. Lett.

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A novel scheme is proposed for a compact bandswitchable power amplifier that employs Micro-Electro-Mechanical System (MEMS) switches in a matching network (MN). According to the on/off status, the switches change the frequency response of the MN, and then the optimum matching can be achieved in different frequency bands. Following the proposed scheme, a dual-band GaAs FET amplifier is designed for the 0.9-GHz and 1.9-GHz bands. The experimental results exhibit the small signal gain of greater than 16 dB and the saturated output power of 31 dBm in each frequency band with adequate efficiency. The performance levels are very close to those of single-mode power amplifiers employing the same FET.Index Terms-Band switchable matching network, MEMS, multiband, power amplifiers, switch.

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Section: Introductionmentioning

confidence: 99%

Novel 900 MHz/1.9 GHz dual-mode power amplifier employing MEMS switches for optimum matching

Fukuda

Okumura

Hirota

et al. 2004

IEEE Microw. Wireless Compon. Lett.

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“…In GSM PAs it is common practice to use a cascade of voltage controlled variable gain stages to vary the output power [4]. Each stage provides a part of the total gain curve that covers more than 45dB of dynamic range in total.…”

Section: Biasing Of Rf Line-upmentioning

confidence: 99%

Biasing circuits for voltage controlled GSM power amplifiers

Bezooijen

Prikhodko

Roermund

33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C)

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-In GSM phones voltage controlled power amplifiers are used to vary the output power. Inaccuracies in output power levels are predominantly caused by drift in PA gain over temperature and input power. In this paper we present biasing circuits that implement an inherently accurate gain control curve. These circuits are based on temperature stabilised V/I-converters and current mirrors. Applying current driven biasing of the first RF-stage reduces the input power dependency of the gain. Measurements show an order of magnitude less drift in PA gain over temperature variations and about a factor five smaller drift over input power variations. The proposed circuits relax the dynamic range and stability requirements on the power control loop and they will help making phone output power calibrations redundant.

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A single‐input single‐chain dual‐band power amplifier for CDMA mobile application

Kim¹,

Kim²,

Park³

2006

Micro & Optical Tech Letters

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SMF-28 fiber, HNA-TEC fiber could relax tolerances of misalignment. Based on the level of 1-dbm degradation, the transverse offset tolerance ranges are list in Table 2. After heating for more than 10 min, the offset range is increased at the speed of about 0.073 m per minute of heating time. The tolerance ranges of transverse misalignment between laser and HNA-TEC fiber were 5.4, 8.7, and 9.2 m for heating times 10, 30, and 60 min, respectively. The tolerance range enlarges to 12.5%, 81.3%, and 91.6%, as compared to that of SMF fiber. At the same condition comparing to SMF-28 fiber, a HNA-TEC fiber after 30 min heating increases about 50% for longitudinal tolerance range of misalignment, as shown in Figure 4(b). Since there is no treatment for all fiber tips, a resonance phenomenon appeared between the LD and the fiber tip when we took the power by moving the fiber in the longitudinal direction. Though the data varied during our experiment, the trend could be easily caught. These experimental results indicate that the HNA-TEC fiber offset tolerance width of misalignment could be enlarged without remarkably increasing the coupling loss. Wider tolerance required longer a heating period. However, for mass production, long-period processing for more than 30 min is not permitted. The tolerance increase rate becomes an important issue in fabrication consideration. In Table 2, the tolerance ranges per minute are given. The heating period from 10 to 30 minutes is better than the others. CONCLUSIONIn this paper, HNA-TEC fiber was fabricated and demonstrated in an LD coupling system. The MFR was expanded at the rate of 0.067 m/min at 1100°C heat treatment. For a 30-min HNA-TEC fiber, the transverse and longitudinal coupling tolerance of misalignment compared to SMF-28 fiber was enlarged by about 81% and 50%, respectively. The measured characteristics of our HNA-TEC fiber are feasible not only to realize a high-tolerance laser package, but also to reduce the assembly cost effectively. ABSTRACT:We demonstrate a new structure of the single-input single-chain power amplifier for cellular (850 MHz)/PCS (1750 MHz) dual-band operation. The single-input structure seems adequate for the reconfigurable multiband transmitter and the single-chain structure can achieve a small chip and module size, thus reducing manufacturing costs. This two-stage amplifier has a maximum output power of 30 dBm (29 dBm), a power-added efficiency (PAE) of 42% (37%), and an adjacent channel power ratio (ACPR) of Ϫ51 dBc (Ϫ48 dBc) at the output power of 28 dBm (28 dBm) under 3.4-V operation voltage for cellular (PCS) band. Figure 5 (a) Magnitude of Z_Cell and Z_PCS; (b) measured P out and PAE for cellular frequency Figure 6 Photograph of the two-stage power amplifier (0.960 ϫ 1.157 mm) Figure 7 Measured P out and PAE: (a) cellular; (b) PCS

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A GSM/EDGE dual-mode, 900/1800/1900-MHz triple-band HBT MMIC power amplifier module

Cited by 18 publications

References 7 publications

Novel 900 MHz/1.9 GHz dual-mode power amplifier employing MEMS switches for optimum matching

Novel 900 MHz/1.9 GHz dual-mode power amplifier employing MEMS switches for optimum matching

Biasing circuits for voltage controlled GSM power amplifiers

A single‐input single‐chain dual‐band power amplifier for CDMA mobile application

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