The properties of the n-St electrode in both aqueous and organic solution for nonstabilizing conditions were studied by the electrorefleetance and capacitance techniques. A shift of the flatband potential in the anodic direction up to 0 VseE has been observed for both solutions and was more pronounced for the aqueous one. The strong influence of polarization under anodic potentials on the properties of the St/electrolyte junction is shown. It is demonstrated that the flatband potential shifts for solutions without a stabilizing agent is caused by the slow oxidation process and related interface state evolution. Anomalously high electroreflectanee signals have been observed for the potentials where a capacitance peak associated with the interface states is detected. We suppose the interaction of hydrogen-related species in a subsurface Si layer with interface states to be responsible for this specific electrorefleetance modulation.
The free electron concentration and mobility behaviour under γ‐irradiation in phosphorus‐doped n‐type Si epilayers, exposed to hydrogen plasma were studied by C‐V, Hall effect, and conductivity measurements. It is shown that preliminary treatment of nSi in hydrogen plasma leads to a significant increase of its radiation hardening and decreases the annealing temperature of γ‐induced radiation defects. It is assumed that passivation of deep radiation defects in hydrogenated nSi occurs due to γ‐induced atomic hydrogen generation from its inactive bonding species, but not dopant‐H complexes. The post‐irradiation hydrogenation of nSi at 100 and 160°C leads to partial recovery of free electron concentration and mobility due to predominant passivation of deep radiation defects.
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