Hydrogen Passivation of γ-Induced Radiation Defects in n-Type Si Epilayers

Abstract

The free electron concentration and mobility behaviour under γ‐irradiation in phosphorus‐doped n‐type Si epilayers, exposed to hydrogen plasma were studied by C‐V, Hall effect, and conductivity measurements. It is shown that preliminary treatment of nSi in hydrogen plasma leads to a significant increase of its radiation hardening and decreases the annealing temperature of γ‐induced radiation defects. It is assumed that passivation of deep radiation defects in hydrogenated nSi occurs due to γ‐induced atomic hydrogen generation from its inactive bonding species, but not dopant‐H complexes. The post‐irradiation hydrogenation of nSi at 100 and 160°C leads to partial recovery of free electron concentration and mobility due to predominant passivation of deep radiation defects.

Hydrogen-Defect Shallow Donors in Si

“…Many obvious characteristics and new phenomena appear due to it, e.g., many Si-H stretching vibrational infrared (IR) absorption peaks have been measured, 1,2) H-related traps, 3) H-induced platelets 4) and defects 5) form in H-containing Si and hydrogen can passivate some shallow acceptors and deep centers because of its reactivity with defects 6) and suppress swirls in Si during growth. 7) Therefore, the study on hydrogen in Si is very attractive and interesting.…”

Повышение радиационной стойкости интегральных схем на основе биполярных транзисторов обработкой в водородной электронно циклотронно резонансной плазме и геттерированием Si-пластин

“…Способность атомарного водорода снижать скорость генерации дефектов при облучении и пассивировать радиационные дефекты в решетке кремния широко используется для повышения радиационной стойкости биполярных транзисторов. Предварительная обработка кремния в водородной плазме приводит к значительному увеличению его радиационной стойкости и снижению температуры отжига радиационных дефектов [18]. В то же время введение водорода перед облучением делает устройства более чувствительными к ионизирующему излучению, что приводит к некоторому снижению коэффициента усиления тока [19].…”

Radiation hardness of bipolar transistor based integrated circuits improved by ECR hydrogen plasma treatment and Si-wafers gettering

“…The ability of atomic hydrogen to reduce the rate of defect generation upon irradiation and to passivate radiation defects in the silicon lattice is widely used to improve the radiation resistance of bipolar transistors. Pretreatment of silicon in hydrogen plasma leads to a significant increase in its radiation resistance and a decrease in the annealing temperature of radiation defects [18]. Meanwhile, the introduction of hydrogen before irradiation makes the devices more sensitive to ionising radiation, which leads to some decrease in the current amplification factor [19].…”