Activation of Si implanted in GaAs at high intensity As co-implantation

N-type Doping Strategies for InGaAs

“…One the major recurring details of previous co-implant studies in GaAs is that ion implant energies used were relatively high, ranging from 40 to over 100 keV. Others have used isoelectronic co-implants of Ga + or As + with Si + or Se + in an effort to regulate stoichiometry and govern how many anion or cation sites were available for Si and Se to occupy [48,49]. Overall most co-implant studies lead to modest or inconsistent deviations in activation from silicon-only implant cases, and were primarily measured from Hall Effect techniques or sheet numbers [49][50][51][52][53].…”

“…Many attempts have been made to preferentially modulate the site selection of amphoteric dopants by introducing excess group II, III, V or VI dopants but these experiments generally report limited effectiveness [47][48][49]56]. In the case of co-implantation, the observed increase in activation or amphoteric behavior is generally much less than the coimplant dose.…”