N-type Doping Strategies for InGaAs

Aldridge, Henry; Lind, Aaron G.; Bomberger, Cory C.; Puzyrev, Yevgeniy; Zide, Joshua M. O.; Pantelides, Sokrates T.; Law, Mark E.; Jones, K. S.

doi:10.1016/j.mssp.2016.12.017

Cited by 8 publications

(3 citation statements)

References 100 publications

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“…However, (carrier density dependent) effective mass and bandgap nonparabolicity is one of the arguments of this paper, which will be discussed later. The sheet electron density in all samples is almost independent of the temperature and agrees with the nominal growth values, indicating that the Si atoms' ionization energy is not affected by Bi incorporation in the InGaAs host semiconductors [46] because all donor atoms are ionized at the lowest temperature.…”

Section: Resultssupporting

confidence: 73%

Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer

Aydin,

Yilmaz,

Bork

et al. 2024

Appl. Phys. A

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The temperature-dependent transport properties of n-type InGaAsBi epitaxial alloys with various doping densities are investigated by conducting magnetoresistance (MR) and Hall Effect (HE) measurements. The electronic band structure of the alloys and free electron distribution were calculated using Finite Element Method (FEM). Analysis of the oscillations in the transverse (Hall) resistivity shows that quasi-two-dimensional electron gas (Q-2D) in the bulk InGaAsBi epitaxial layer (three-dimensional, 3D) forms at the sample surface under magnetic field even though there is no formation of the spacial two-dimensional electron gas (2DEG) at the interface between InGaAs and InP:Fe interlayer. The formation of Q-2D in the 3D epitaxial layer was verified by temperature and magnetic field dependence of the resistivity and carrier concentration. Analysis of Shubnikov-de Haas (SdH) oscillations in longitudinal (sample) resistivity reveals that the electron effective mass in InGaAsBi alloys are not affect by Bi incorporation into host InGaAs alloys, which verifies the validity of the Valence Band Anti-Crossing (VBAC) model. The Hall mobility of the nondegenerate samples shows the conventional 3D characteristics while that of the samples is independence of temperature for degenerated samples. The scattering mechanism of the electrons at low temperature is in long-range interaction regime. In addition, the effects of electron density on the transport parameters such as the effective mass, and Fermi level are elucidated considering bandgap nonparabolicity and VBAC interaction in InGaAsBi alloys.

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Section: Resultssupporting

confidence: 73%

Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer

Aydin,

Yilmaz,

Bork

et al. 2024

Appl. Phys. A

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“…[ 13 ] Its intrinsic absorption band (less than 480 nm) originates in the π → π * electron transitions composed of the sp 2 hybridization of C and N. [ 6b ] Other n→ π * electron transitions larger than 500 nm are intrinsically weaker than π → π * transitions due to big differences in orbital electron densities. [ 14 ] Considering that the conductivity depends on carrier concentrations and mobility, n‐type doping can greatly improve the carrier concentrations and conductivity of the samples, [ 15 ] which is beneficial to the photogenerated carriers transport. In addition, the dramatically elevated electron densities may activate essentially prohibited n→ π * electron transitions and even produce NIR light absorption.…”

Section: Introductionmentioning

confidence: 99%

Breaking the Limitation of Elevated Coulomb Interaction in Crystalline Carbon Nitride for Visible and Near‐Infrared Light Photoactivity

Zhang

Rauf

et al. 2022

Advanced Science

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Most near-infrared (NIR) light-responsive photocatalysts inevitably suffer from low charge separation due to the elevated Coulomb interaction between electrons and holes. Here, an n-type doping strategy of alkaline earth metal ions is proposed in crystalline K + implanted polymeric carbon nitride (KCN) for visible and NIR photoactivity. The n-type doping significantly increases the electron densities and activates the n→𝝅* electron transitions, producing NIR light absorption. In addition, the more localized valence band (VB) and the regulation of carrier effective mass and band decomposed charge density, as well as the improved conductivity by 1-2 orders of magnitude facilitate the charge transfer and separation. The proposed n-type doping strategy improves the carrier mobility and conductivity, activates the n→𝝅* electron transitions for NIR light absorption, and breaks the limitation of poor charge separation caused by the elevated Coulomb interaction.

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“…In 0.53 Ga 0.47 As has been proved to match well with InP substrate, with a direct bandgap about 0.75 eV, which ensures efficient photon absorption within a wavelength range of 0.9-1.7 µm. Doping strategies have been thoroughly studied for the optimization of InGaAs processing, to reach high material quality and achieve a high device performance [14][15][16][17]. By using a highly doped p-type absorber, Huapu et al reported InGaAs photodiodes with excellent frequency behavior of 47.5 dBm at 20 GHz [16].…”

Section: Introductionmentioning

confidence: 99%

Design and Fabrication of High Performance InGaAs near Infrared Photodetector

Liu,

Wang,

Guo

et al. 2023

Nanomaterials

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InGaAs photodiodes have a wide range of important applications; for example, NIR imaging, fiber optical communication, and spectroscopy. In this paper, we studied InGaAs photodiodes with different doping concentration absorber layers. The simulated results suggested that, by reducing the absorber doping concentration from 1 × 1016 to 1 × 1015 cm−3, the maximum quantum efficiency of the devices can rise by 1.2%, to 58%. The simulation also showed that, by increasing the doping concentration of the absorber layer within a certain range, the dark current of the device can be slightly reduced. A PIN structure was grown and fabricated, and CV measurements suggested a low doping concentration of about 1.2 × 1015 cm−3. Although the thermal activation energy of the dark current suggested a distinct component of shunt dark current at a high temperature range, a dark current of ~6 × 10−4 A/cm2 (−0.5 V) was measured at room temperature. The peak quantum efficiency of the InGaAs device was characterized as 54.7% without antireflection coating and 80.2% with antireflection coating.

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N-type Doping Strategies for InGaAs

Abstract: 2017-08-30T02:06:39

Cited by 8 publications

References 100 publications

Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer

Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer

Breaking the Limitation of Elevated Coulomb Interaction in Crystalline Carbon Nitride for Visible and Near‐Infrared Light Photoactivity

Design and Fabrication of High Performance InGaAs near Infrared Photodetector

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