Oxygen Gettering and Thermal Donor Formation at Post-Implantation Annealing of Silicon

Ulyashin, A.; Bumai, Yu. A.; Ivanov, Anatoly I.; Varichenko, V.S.; Kazychits, N. M.; Zaǐtsev, A. M.; Fahrner, W. R.

doi:10.1007/978-94-009-0355-5_35

Cited by 3 publications

(2 citation statements)

References 11 publications

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“…In particular, it was demonstrated that a counter doping by such donors of initially p-type CZ Si and in some cases p-type FZ Si and formation of regions around the ion-projected range occurs. [72][73][74][75] Because in the case of ion implantation, interstitials and vacancies are formed and participate in all postimplantation complex-formation processes ͑on postimplantation anneals, for in-stance͒, it is difficult to make some conclusions about the nature of shallow donors, which appear at such conditions. It has to be mentioned in this context that Si interstitials can be involved in the process of the STDH formation.…”

Section: H438mentioning

confidence: 99%

What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

Simoen

Huang

et al. 2009

J. Electrochem. Soc.

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The hydrogen-plasma-accelerated formation of shallow thermal donors in silicon has been studied for a wide range of doping concentration and interstitial oxygen content [normalOnormali] by electrical and spectroscopic techniques. The plasma-hydrogenated material has been heat treated for different times in the temperature range of 275–500°C . It is shown that, besides oxygen thermal donors (OTDs), hydrogen-related shallow thermal donors (STDHs) also play a crucial role in the hydrogen-assisted creation of excess carriers. The impact of different factors on the introduction rate of the shallow donors will be discussed, whereby a strong role is played by the doping concentration and type (i.e., the Fermi-level position during the thermal anneal in air). Generally, shallow donor formation is faster in p- compared to n-type Si, which is associated with the different charge state of H. From combined deep-level transient spectroscopy and Fourier transform infrared absorption spectroscopy, it is concluded that the additional free carriers are contributed by both STDH and OTD centers, so that H not only plays a catalytic role but actively takes part in the donor formation, depending on the experimental conditions. Finally, from our data some conclusions can be made regarding the nature of the STDHs, which is still a matter of debate.

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Section: H438mentioning

confidence: 99%

What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

Simoen

Huang

et al. 2009

J. Electrochem. Soc.

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“…It is necessary to note also that the hydrogen-related shallow donor centers can be formed also in case of H + ion implantation in Si at room temperature followed by heat treatments at temperatures around 400 ºC. In particular it was demonstrated that a counter doping by such donors of initially p-type Cz Si and in some cases p-type FZ Si and formation of n-type regions around the ion projected range occurs [72][73][74][75]. Since in case of ion implantation interstitials and vacancies are formed and participate in all post implantation complex formation processes (upon post-implantation anneals for instance), it is difficult to make some conclusions about the nature of shallow donors, which appear at such conditions.…”

Section: Nature Of Stdh Centersmentioning

confidence: 99%

What do We Know About Hydrogen-Induced Thermal Donors?

Simoen¹,

Huang

Ma³

et al. 2008

ECS Trans.

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The hydrogen-plasma-accelerated formation of shallow thermal donors in silicon has been studied for a wide range of doping density and interstitial oxygen content [Oi] by electrical and spectroscopic techniques. The plasma-hydrogenated material has been heat treated for different times in the temperature range of 275 to 500 oC. It is shown that besides Oxygen Thermal Donors (OTDs) also hydrogen related Shallow Thermal Donors (STDHs) play a crucial role in the hydrogen-assisted creation of excess carriers. The impact of different factors on the introduction rate of the shallow donors will be discussed, whereby a strong role is played by the doping density and type, i.e., the Fermi level position during the thermal anneal in air. Generally, shallow donor formation is faster in p- compared with n-type Si, which is associated with the different charge state of H. From combined Deep Level Transient Spectroscopy (DLTS) and Fourier Transform Infrared (FTIR) absorption spectroscopy it is concluded that the additional free carriers are contributed by both STDH and OTD centers, so that H not only plays a catalytic role but actively takes part in the donor formation, depending on the experimental conditions. Finally, from our data some conclusions can be made regarding the nature of the STDHs, which is still a matter of debate.

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Oxygen Gettering and Thermal Donor Formation at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon

et al. 1997

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The effect of oxygen gettering by buried defect layers at post-implantation annealing of hydrogen implanted Czochralski (Cz) grown silicon has been investigated. Hydrogen ions were implanted with an energy of 180 keV and doses of 2.7.1016cm−2 into p-type Cz and for comparison into p-type float zone (Fz) Si. The samples were annealed at temperatures between 400 °C and 1200 °C in a forming gas ambient and examined by secondary ion mass spectrometry (SIMS) in order to measure the hydrogen and oxygen concentration profiles. Spreading resistance probe (SRP) measurements were used to obtain depth resolved profiles of the resistivity. The observed changes of the resistivity after post-implantation annealing of hydrogen implanted Cz and Fz Si can be explained by hydrogen enhanced thermal donor formation processes (oxygen or hydrogen related) and charges at the SiOx precipitates. The effective oxygen gettering in hydrogen implanted Cz silicon is attributed to hydrogen enhanced diffusion of oxygen to buried defect layers.

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Oxygen Gettering and Thermal Donor Formation at Post-Implantation Annealing of Silicon

Cited by 3 publications

References 11 publications

What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

What do We Know About Hydrogen-Induced Thermal Donors?

Oxygen Gettering and Thermal Donor Formation at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon

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