Oxygen Gettering and Thermal Donor Formation at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon

Ulyashin, A.; Bumay, Y.A.; Fahrner, W. R.; Ivanovo, A. I.; Job, R.; Palmetshofer, L.

doi:10.1557/proc-469-95

Cited by 6 publications

(1 citation statement)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In particular, it was demonstrated that a counter doping by such donors of initially p-type CZ Si and in some cases p-type FZ Si and formation of regions around the ion-projected range occurs. [72][73][74][75] Because in the case of ion implantation, interstitials and vacancies are formed and participate in all postimplantation complex-formation processes ͑on postimplantation anneals, for in-stance͒, it is difficult to make some conclusions about the nature of shallow donors, which appear at such conditions. It has to be mentioned in this context that Si interstitials can be involved in the process of the STDH formation.…”

Section: H438mentioning

confidence: 99%

What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

Simoen

Huang

et al. 2009

J. Electrochem. Soc.

View full text Add to dashboard Cite

The hydrogen-plasma-accelerated formation of shallow thermal donors in silicon has been studied for a wide range of doping concentration and interstitial oxygen content [normalOnormali] by electrical and spectroscopic techniques. The plasma-hydrogenated material has been heat treated for different times in the temperature range of 275–500°C . It is shown that, besides oxygen thermal donors (OTDs), hydrogen-related shallow thermal donors (STDHs) also play a crucial role in the hydrogen-assisted creation of excess carriers. The impact of different factors on the introduction rate of the shallow donors will be discussed, whereby a strong role is played by the doping concentration and type (i.e., the Fermi-level position during the thermal anneal in air). Generally, shallow donor formation is faster in p- compared to n-type Si, which is associated with the different charge state of H. From combined deep-level transient spectroscopy and Fourier transform infrared absorption spectroscopy, it is concluded that the additional free carriers are contributed by both STDH and OTD centers, so that H not only plays a catalytic role but actively takes part in the donor formation, depending on the experimental conditions. Finally, from our data some conclusions can be made regarding the nature of the STDHs, which is still a matter of debate.

show abstract

Section: H438mentioning

confidence: 99%