The hydrogen gettering at post-implantation hydrogen plasma treatments of helium- and hydrogen implanted Czochralski silicon

Ulyashin, A.; Ivanov, Anatoly I.; Job, R.; Fahrner, W.R.; Frantskevich, A.V.; Komarov, F. F.; Kamyshan, A.C

doi:10.1016/s0921-5107(99)00435-3

Cited by 7 publications

(4 citation statements)

References 21 publications

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“…[4]. It is necessary to note that similar effects (accumulation of hydrogen at R p and stability of the SiO,H structures at high temperatures) were reported earlier for the helium-implanted Si:He samples annealed in hydrogen-containing ambient [7][8][9].…”

Section: The Quasi-continuous Xsupporting

confidence: 70%

Hydrogen gettering in annealed oxygen-implanted silicon

Misiuk¹,

Barcz²,

Ulyashin³

et al. 2010

Semicond. Phys. Quantum Electron. Optoelectron.

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Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O prepared by O 2 + implantation at the energy 200 keV and doses 10 14 and 10 17 cm-2) was investigated after annealing of Si:O at temperatures up to 1570 K, including also processing under enhanced hydrostatic pressure, up to 1.2 GPa. Depending on processing conditions, buried layers containing SiO 2-x clusters and/or precipitates were formed. To produce hydrogen-rich Si:O,H structures, Si:O samples were subsequently treated in RF hydrogen plasma. As determined using secondary ion mass spectrometry, hydrogen was accumulated in sub-surface region as well as within implantation-disturbed areas. It has been found that hydrogen was still present in Si:O,H structures formed by oxygen implantation with the dose D = 10 7 cm-2 even after post-implantation annealing up to 873 K. It is concluded that hydrogen accumulation within the disturbed areas in Si:O as well as in SOI structures can be used for recognition of defects.

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Section: The Quasi-continuous Xsupporting

confidence: 70%

Hydrogen gettering in annealed oxygen-implanted silicon

Misiuk¹,

Barcz²,

Ulyashin³

et al. 2010

Semicond. Phys. Quantum Electron. Optoelectron.

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“…This effect can be attributed to the deuterium gettering at plasma-induced structural defects, similar to those created by H + implantation [17][18][19][20]. Moreover, deuterium can be accumulated at the R p region, as reported earlier for several cases [11,12,17] .…”

Section: Deuterium Accumulated In Plasma Treatedsupporting

confidence: 58%

“…The ion cut process is based on an anneal of sufficiently high dose H + implanted Si:H structures, which contains high concentration of hydrogen at the local region around the projected range R p of H + ions and which are bonded to stiffer substrates [7]. Quite similar effect seems to be possible in the case of hydrogen plasma treatment of Si samples with buried defect layer created by ion implantation [10][11][12]. In this case hydrogen accumulation at the buried layer is provided by unique properties of such layer to accumulate / getter hydrogen in-diffused from a plasma.…”

mentioning

confidence: 99%

Buried spongy‐like layers in silicon implanted with He⁺, annealed and treated in D⁺ plasma

Misiuk

Ulyashin

Barcz

et al. 2009

Phys. Status Solidi (c)

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Implantation of silicon with He+ ions (energy 300 keV, dose 5×1015 cm–2) and subsequent processing of Si:He structures at high temperature (HT) up to 1270 K under Ar hydrostatic pressure (HP) up to 1.2 GPa results in a creation of spongy‐like buried layer at the projected range of He ions, which is about 1.4 μm depth. Upon subsequent treatment of Si:He structures at 573 K in deuterium plasma under 3×102 Pa, deuterium is accumulated with concentrations up to about 1019 cm–3 at two different well pronounced local regions: (i) subsurface region with the width of about 0.5 μm and (ii) region‐around the projected range of He ions. As follows from TEM, X‐Ray and SIMS measurements, microstructure of nano‐structured spongy‐like layer and D concentration are dependent on HT, HP and processing time. It is established that further annealing of plasma treated Si:He,D at 723 K under 105 Pa/1.1 GPa for 1 h leads to a release of deuterium from both mentioned above local regions of the Si:He,D structures. It is concluded that spongy‐like buried layer created by He+ implantation can be used for gettering / accumulation of deuterium, which can be of interest for ion cut based technology. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The results confirm that extended defects in Si getter the hydrogen, which diffuses from the plasma treated surface deep into the bulk of the Si, in agreement with the earlier observations of hydrogen gettering by defect layers formed by ion implantation. 10,13,22,23 Structural defects in mc Si samples act as trapping centers for the indiffused hydrogen during the hydrogenation process in the same way as buried defect layers are initiated by ion implantation. In Figs.…”

Section: B Hydrogen Induced Bulk Defectsmentioning

confidence: 99%

Transmission electron microscopy study of hydrogen defect formation at extended defects in hydrogen plasma treated multicrystalline silicon

Nordmark

Holmestad

Walmsley

et al. 2009

Journal of Applied Physics

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Hydrogenation of multicrystalline silicon for solar cell applications is considered to be an effective method of increasing the lifetime by passivating defects and impurities. Hydrogen plasma treated as-cut and chemically etched multicrystalline silicon samples have been studied by electron microscopy in order to investigate hydrogen defect formation at extended bulk defects. In chemically etched samples, the texture of the surface after hydrogen plasma treatment differs between different grains depending on grain orientation. In as-cut samples, hydrogen induced defects are formed on sawing defects that extend up to ∼5 μm below the Si surface. Intragranular defects are also observed in the ∼1 μm subsurface region. The density of defects is higher in as-cut samples than in chemically etched samples and the size of the defects increases with depth. Hydrogen induced structural defects on bulk dislocations and on dislocations in twin grain boundaries and stacking faults are found several microns below the sample surface. It is concluded that (i) the passivation efficiency of multicrystalline silicon substrates after H plasma treatment can be limited by the formation of hydrogen induced structural defects and that (ii) such defects can be used to getter unwanted impurities upon high temperature processing of the Si wafers.

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The hydrogen gettering at post-implantation hydrogen plasma treatments of helium- and hydrogen implanted Czochralski silicon

Cited by 7 publications

References 21 publications

Hydrogen gettering in annealed oxygen-implanted silicon

Hydrogen gettering in annealed oxygen-implanted silicon

Buried spongy‐like layers in silicon implanted with He⁺, annealed and treated in D⁺ plasma

Transmission electron microscopy study of hydrogen defect formation at extended defects in hydrogen plasma treated multicrystalline silicon

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The hydrogen gettering at post-implantation hydrogen plasma treatments of helium- and hydrogen implanted Czochralski silicon

Cited by 7 publications

References 21 publications

Hydrogen gettering in annealed oxygen-implanted silicon

Hydrogen gettering in annealed oxygen-implanted silicon

Buried spongy‐like layers in silicon implanted with He+, annealed and treated in D+ plasma

Transmission electron microscopy study of hydrogen defect formation at extended defects in hydrogen plasma treated multicrystalline silicon

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Product

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Buried spongy‐like layers in silicon implanted with He⁺, annealed and treated in D⁺ plasma