InGaN/GaN multiple-quantum-well light-emitting-diode structures utilizing tunnel contact junctions grown by metalorganic chemical vapor deposition have been demonstrated. The p+/n+ GaN tunnel junctions are located in the upper cladding layers of conventional devices, allowing n-type GaN instead of p-type GaN as a top contact layer. Thus, metal ohmic contacts are done at the same time on the top and the lower contact layers. The reverse-biased tunnel contact junction provides lateral current spreading without semitransparent electrode and spatially uniform luminescence exhibiting an improved radiative efficiency. The tunnel contact junction is shown to be an effective method to make possible hole injection via a lateral electron current, with only a small penalty in voltage drop compared to conventional devices.

The influence of indium composition on carrier escape was studied considering recombination in InGaN/GaN multiple quantum well solar cells with indium compositions of 17% and 25%. Competition between tunneling and recombination turned out to act as a crucial role for the short-circuit current density (Jsc) and fill factor (FF). To enhance the Jsc and the FF, the tunneling-dominant carrier decay rather than recombination is required in the operating range of the solar cells which is possible by optimizing the band structures for a shorter tunneling time and by improving the crystalline quality for a longer recombination time.

Time reversal invariance violating parity conserving (TVPC) effects are calculated for elastic proton deuteron scattering with proton energies up to 2 MeV. Distorted Wave Born Approximation is employed to estimate TVPC matrix elements, based on hadronic wave functions, obtained by solving three-body Faddeev-Merkuriev equations in configuration space with realistic potentials.

Parity violating (PV) effects in neutron-deuteron radiative capture are studied using Desplanques, Donoghue, and Holstein (DDH) and effective field theory weak potentials. The values of PV effects are calculated using wave functions, obtained by solving three-body Faddeev equations in configuration space for phenomenological strong potentials. The relations between physical observables and low-energy constants are presented, and dependencies of the calculated PV effects on strong and weak potentials are discussed. The presented analysis shows the possible reason for the existing discrepancy in PV nuclear data analysis using the DDH approach and reveals a new opportunity to study short range interactions in nuclei.

Understanding the heterojunction of a lateral heterostructured transition metal dichalcogenide (hTMD) is important in order to take advantage of the combined optoelectronic properties of individual TMDs for various applications but, however, is hampered by mingled effects from lattice mismatch and substrate interaction. Here, we systematically investigated the strain occurring at lateral hTMDs consisting of molybdenum disulfide (MoS2) and molybdenum diselenide (MoSe2) prepared by chemical vapor deposition. Comparison of homologous TMDs and hTMDs from controlled growth order revealed systematic change in photoluminescence behavior depending on substrate interaction and relative lattice mismatch. Near the heterojunction, a TMD with a larger lattice constant (a) exhibits photoluminescence (PL) red-shift, whereas a TMD with smaller a shows an opposite trend owing to lattice-induced strain. These effects are augmented in a subtractive or additive manner by tensile strain from the substrate interaction. Moreover, comparison of PLs revealed that the shell region grown from the core edges exhibits weak substrate interaction contrasted by that of a shell region independently grown on a shell. This study provides detailed understandings of the heterojunction at a lateral hTMD for various applications.