This cluster analysis of cortical thickness of the entire brain showed that AD dementia in the earlier stages can be categorized into various anatomical subtypes, with distinct clinical features.

Recently, metasurfaces composed of artificially fabricated subwavelength structures have shown remarkable potential for the manipulation of light with unprecedented functionality. Here, we first demonstrate a metasurface application to realize a compact near-eye display system for augmented reality with a wide field of view. A key component is a see-through metalens with an anisotropic response, a high numerical aperture with a large aperture, and broadband characteristics. By virtue of these high-performance features, the metalens can overcome the existing bottleneck imposed by the narrow field of view and bulkiness of current systems, which hinders their usability and further development. Experimental demonstrations with a nanoimprinted large-area see-through metalens are reported, showing full-color imaging with a wide field of view and feasibility of mass production. This work on novel metasurface applications shows great potential for the development of optical display systems for future consumer electronics and computer vision applications.

Chemical treatment using bis(trifluoromethane) sulfonimide (TFSI) was shown to be particularly effective for increasing the photoluminescence (PL) of monolayer (1L) MoS, suggesting a convenient method for overcoming the intrinsically low quantum yield of this material. However, the underlying atomic mechanism of the PL enhancement has remained elusive. Here, we report the microscopic origin of the defect healing observed in TFSI-treated 1L-MoS through a correlative combination of optical characterization and atomic-scale scanning transmission electron microscopy, which showed that most of the sulfur vacancies were directly repaired by the extrinsic sulfur atoms produced from the dissociation of TFSI, concurrently resulting in a significant PL enhancement. Density functional theory calculations confirmed that the reactive sulfur dioxide molecules that dissociated from TFSI can be reduced to sulfur and oxygen gas at the vacancy site to form strongly bound S-Mo. Our results reveal how defect-mediated nonradiative recombination can be effectively eliminated by a simple chemical treatment method, thereby advancing the practical applications of monolayer semiconductors.

InGaN/GaN multiple-quantum-well light-emitting-diode structures utilizing tunnel contact junctions grown by metalorganic chemical vapor deposition have been demonstrated. The p+/n+ GaN tunnel junctions are located in the upper cladding layers of conventional devices, allowing n-type GaN instead of p-type GaN as a top contact layer. Thus, metal ohmic contacts are done at the same time on the top and the lower contact layers. The reverse-biased tunnel contact junction provides lateral current spreading without semitransparent electrode and spatially uniform luminescence exhibiting an improved radiative efficiency. The tunnel contact junction is shown to be an effective method to make possible hole injection via a lateral electron current, with only a small penalty in voltage drop compared to conventional devices.

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