We report a color tunable display consisting of two passive-matrix micro-LED array chips. The device has combined vertically stacked blue and green passive-matrix LED array chips sandwiched by a transparent bonding material. We demonstrate that vertically stacked blue and green micro-pixels are independently controllable with operation of four color modes. Moreover, the color of each pixel is tunable in the entire wavelength from the blue to green region (450 nm - 540 nm) by applying pulse-width-modulation bias voltage. This study is meaningful in that a dual color micro-LED array with a vertically stacked subpixel structure is realized.

The advent of special types of transparent electrodes, known as "ultrathin metal electrodes," opens a new avenue for flexible and printable electronics based on their excellent optical transparency in the visible range while maintaining their intrinsic high electrical conductivity and mechanical flexibility. In this new electrode architecture, introducing metal nucleation inducers (MNIs) on flexible plastic substrates is a key concept to form high-quality ultrathin metal films (thickness ≈ 10 nm) with smooth and continuous morphology. Herein, this paper explores the role of "polymeric" MNIs in fabricating ultrathin metal films by employing various polymers with different surface energies and functional groups. Moreover, a scalable approach is demonstrated using the ionic self-assembly on typical plastic substrates, yielding large-area electrodes (21 × 29.7 cm 2 ) with high optical transmittance (>95%), low sheet resistance (<10 Ω sq −1 ), and extreme mechanical flexibility. The results demonstrate that this new class of flexible and transparent electrodes enables the fabrication of efficient polymer light-emitting diodes.

Current spreading could be improved by using Ag-mesh-combined graphene sheets due to dramatically reducing the sheet resistance.

The influence of indium composition on carrier escape was studied considering recombination in InGaN/GaN multiple quantum well solar cells with indium compositions of 17% and 25%. Competition between tunneling and recombination turned out to act as a crucial role for the short-circuit current density (Jsc) and fill factor (FF). To enhance the Jsc and the FF, the tunneling-dominant carrier decay rather than recombination is required in the operating range of the solar cells which is possible by optimizing the band structures for a shorter tunneling time and by improving the crystalline quality for a longer recombination time.

InGaN based MQW solar cells have been fabricated with 4 different transparent top electrode structures: (1)- ITO 200 nm, (2)-ITO nano dots only, (3)-ITO nano dots on ITO 50 nm and (4)-ITO nano dots on ITO 100 nm. The solar cell with the ITO 50 nm on ITO nano dots under AM 1.5 conditions showed the best results: 2.3 V for V(oc), 0.69 mA/cm(2) for J(sc), 41.8% for peak EQE, and 0.91% for conversion efficiency. Efficiency improvement was possible due to the decreased reflectance achieved by the ITO nano dots covered with an ITO film with optimized thickness.