Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report a low-temperature (<100 °C) processed top-gate TFT-type NVM device using indium gallium zinc oxide (IGZO) semiconductor with monolayer gold nanoparticles (AuNPs) as a floating gate layer to obtain reliable memory operations. The proposed NVM device exhibits a high memory window (ΔVth) of 13.7 V when it sweeps from −20 V to +20 V back and forth. Additionally, the material characteristics of the monolayer AuNPs (floating gate layer) and IGZO film (semiconductor layer) are confirmed using transmission electronic microscopy (TEM), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) techniques. The memory operations in terms of endurance and retention are obtained, revealing highly stable endurance properties of the device up to 100 P/E cycles by applying pulses (±20 V, duration of 100 ms) and reliable retention time up to 104 s. The proposed NVM device, owing to the properties of large memory window, stable endurance, and high retention time, enables an excellent approach in futuristic non-volatile memory technology.
Transition Metal Dichalcogenides
Seongin Hong, Sunkook Kim, and colleagues present the first report which not only proposes a novel approach to improve the stability of two‐dimensional transition metal dichalcogenides based field‐effect transistors but also implements a complementary metal oxide semiconductor inverter circuit using it. In article number 2101012, the authors develop high‐stability tungsten diselenide field‐effect transistors with an ultrathin Al‐assisted alumina passivation.
2D transition metal dichalcogenides (TMDs) have recently received significant attention owing to their superior electrical, optical, and mechanical properties. However, most previous research on TMDs has not focused on their stability against bias and illumination stress. Here, high‐stability tungsten diselenide (WSe2) field‐effect transistors (FETs) are introduced with an ultrathin Al‐assisted alumina (Al2O3) passivation. Through the Al‐assisted Al2O3 passivation, the transport behavior of the WSe2 FETs is converted from p‐type to ambipolar owing to the n‐type doping effect of Al2O3 passivation. Furthermore, the stability of the WSe2 FETs is highly improved against gate bias and illumination stress owing to the effect of Al2O3 film quality on WSe2 by ultrathin Al predeposition (≈1 nm). To compare the stress effect on the electrical characteristics, three types of devices: 1) pristine WSe2 FETs, 2) WSe2 FET with Al2O3 passivation layer, and 3) WSe2 FETs with Al‐assisted Al2O3 passivation layer, are systematically tested with positive gate bias stress (PBS) and positive gate bias illumination stress (PBIS). Finally, an ambipolar inverter composed of Al‐assisted Al2O3 passivated WSe2 FETs is demonstrated. This study proposes a promising approach that improves the stability of TMD‐based FETs for next‐generation logic applications.
This study presents the results of experiments to investigate the effect of polymer type and curing temperature on the mechanical properties of polymer mortar. Setting time of two types of polymers, hardening-delayed polymer(HDP) and rapid hardening polymer(RHP), was tested to check the working time. Additionally, flexural strength, compressive strength, and splitting tensile strength was investigated for mortars using these polymers. From these results, it was confirmed that, irrespective to curing temperature, RHP mortar at the curing age of 24h develops the similar mechanical properties to maximum properties and HDP mortar is more sensitive to the curing temperature. In addition, it should be noted that RHP mortar and HDP mortar are suitable in winter and summer, respectively.
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