Wearable on‐skin electronic devices that can monitor temperature in real time are of significant interest for personalized mobile health monitoring. Here, a flexible temperature sensor directly patterned by laser‐induced carbonization on Kapton polyimide films integrated with flexible printed circuit boards is reported. The proposed sensor design possessing high resistance values exhibits high‐linear and stable response to temperatures when integrated with flexible printed circuit boards (FPCBs) to enable continuous monitoring. The anisotropic conductive film bonding technique is used to obtain the stable real‐time monitoring data under various complex environments. The sensor integration with a wearable patch based FPCB establishes conformal contacts with human skin and allows wireless sensing capabilities smoothly in real time. This kind of approach can enable multifunctional sensors to be directly laser patterned on FPCBs without any additional interfacing.

The technological ability to detect a wide spectrum range of illuminated visible-to-NIR is substantially improved for an amorphous metal oxide semiconductor, indium gallium zinc oxide (IGZO), without employing an additional photoabsorber. The fundamentally tuned morphology via structural engineering results in the creation of nanopores throughout the entire thickness of ∼30 nm. See-through nanopores have edge functionalization with vacancies, which leads to a large density of substates near the conduction band minima and valence band maxima. The presence of nanoring edges with a high concentration of vacancies is investigated using chemical composition analysis. The process of creating a nonporous morphology is sophisticated and is demonstrated using a wafer-scale phototransistor array. The performance of the phototransistors is assessed in terms of photosensitivity (S) and photoresponsivity (R); both are of high magnitudes (S = 8.6 × 10 4 at λ ex = 638 nm and P inc = 512 mW cm 2− ; R = 120 A W 1− at P inc = 2 mW cm 2− for the same λ ex ). Additionally, the 7 × 5 array of 35 phototransistors is effective in sensing and reproducing the input image by responding to selectively illuminated pixels.

MoS2‐based transparent electronics can revolutionize the state‐of‐the‐art display technology. The low‐temperature synthesis of MoS2 below the softening temperature of inexpensive glasses is an essential requirement, although it has remained a long persisting challenge. In this study, plasma‐enhanced chemical vapor deposition is utilized to grow large‐area MoS2 on a regular microscopic glass (area ≈27 cm2). To benefit from uniform MoS2, 7 × 7 arrays of top‐gated transparent (≈93% transparent at 550 nm) thin film transistors (TFTs) with Al2O3 dielectric that can operate between −15 and 15 V are fabricated. Additionally, the performance of TFTs is assessed under irradiation of visible light and estimated static performance parameters, such as photoresponsivity is found to be 27 A W−1 (at λ = 405 nm and an incident power density of 0.42 mW cm−2). The stable and uniform photoresponse of transparent MoS2 TFTs can facilitate the fabrication of transparent image sensors in the field of optoelectronics.

The emergence of large-area electronics with unprecedented multifunctionalities of optical and electrical properties and ubiquitous coverage, such as transparent displays, building sensors, smart windows, car surface, smart textiles, and solar Appreciable advancement of low-temperature combustion processing brings a step closer to the fulfillment of large-area, flexible electronics. The maximum temperature of deposition is successfully reduced below the softening temperature of the polymeric substrates. The method embodies the incorporation of fuel-and oxidizer-ligands in the precursor, which leads to an exothermic reaction resulting in low-temperature conversion and/or densification of the metal oxide thin films. A series of electrically conducting, semiconducting, and high permittivity dielectric metal oxides are deposited on varied substrates, including flexible plastic substrates, such as polyimide and aromatic polyester. The combustion processing is efficient in depositing metal, metal oxide, metal-metal oxide composite thin films at considerably low temperatures. In addition, the combustible precursors are considered compatible with diverse solution deposition methods such as spin coating, spray coating, inkjet printing, and blade coating. The combustion processed metal oxide thin films have the potential to exhibit acceptable device performance of thin film transistors, solar cells, gas sensors, organic light emitting diodes, and so on. The present review not only covers the ongoing research in solution combustion-based deposition, but also discusses potential of the various devices with combustion-derived thin films of functional oxides as active/passive components.

Herein, the direct growth of polar orthorhombic phase in Hf0.5Zr0.5O2 (HZO) thin films is reported using Pulsed Laser Deposition (PLD). The growth of HZO onto a preheated (700 °C) silicon substrate mimics the rapid thermal annealing, which allows the formation of smaller crystallites (~9.7 nm) with large surface energy leading to the stabilization of metastable orthorhombic phase. Unlike atomic layer deposition (ALD) of HZO, PLD is more advantageous for depositing highly crystalline thin films through optimized parameters, such as laser fluence and background gas pressure. Further, the PLD-HZO is integrated with HfO2 dielectric and the resulting gate stacks have been used in the bottom gate FET architecture-‘Si//PLD-HZO/HfO2/MoS2//Ti/Au’. The NCFETs have yielded a sub-thermionic subthreshold swing (SSfor = 33.03 ± 8.7 mV/dec. and SSrev = 36.4 ± 7.7 mV/dec.) and a negligible hysteresis (~28 mV), which is capable in realizing low power integrated digital/analog circuits.