Phase transitions can be used to alter the properties of a material without adding any additional atoms and are therefore of significant technological value. In a solid, phase transitions involve collective atomic displacements, but such atomic processes have so far only been investigated using macroscopic approaches. Here, we show that in situ scanning transmission electron microscopy can be used to follow the structural transformation between semiconducting (2H) and metallic (1T) phases in single-layered MoS2, with atomic resolution. The 2H/1T phase transition involves gliding atomic planes of sulphur and/or molybdenum and requires an intermediate phase (α-phase) as a precursor. The migration of two kinds of boundaries (β- and γ-boundaries) is also found to be responsible for the growth of the second phase. Furthermore, we show that areas of the 1T phase can be controllably grown in a layer of the 2H phase using an electron beam.

We report on the fabrication of field-effect transistors based on single layers and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device environment and that long in situ annealing drastically improves the contact transparency, allowing four-terminal measurements to be performed and the pristine properties of the material to be recovered. Our devices show n-type behavior with a high room-temperature on/off current ratio of ∼10(6). They show clear metallic behavior at high charge carrier densities and mobilities as high as ∼140 cm(2)/(V s) at low temperatures (above 300 cm(2)/(V s) in the case of bilayers). In the insulating regime, the devices exhibit variable-range hopping, with a localization length of about 2 nm that starts to increase as the Fermi level enters the conduction band. The promising electronic properties of WS2, comparable to those of single-layer MoS2 and WSe2, together with its strong spin-orbit coupling, make it interesting for future applications in electronic, optical, and valleytronic devices.

Rhenium disulfide (ReS2) and diselenide (ReSe2), the group 7 transition metal dichalcogenides (TMDs), are known to have a layered atomic structure showing an in-plane motif of diamond-shaped-chains (DS-chains) arranged in parallel. Using a combination of transmission electron microscopy and transport measurements, we demonstrate here the direct correlation of electron transport anisotropy in single-layered ReS2 with the atomic orientation of the DS-chains, as also supported by our density functional theory calculations. We further show that the direction of conducting channels in ReS2 and ReSe2 can be controlled by electron beam irradiation at elevated temperatures and follows the strain induced to the sample. Furthermore, high chalcogen deficiency can induce a structural transformation to a nonstoichiometric phase, which is again strongly direction-dependent. This tunable in-plane transport behavior opens up great avenues for creating nanoelectronic circuits in 2D materials.

Single-layered MoS2 doped with Re (n-type) and Au (p-type) are investigated by in situ scanning transmission electron microscopy. Re atoms substituting Mo sites enhance the local chemical affinity, evidenced by agglomeration of other dopant/impurity atoms. Au atoms exist as adatoms and show larger mobility under the electron beam. These behaviors are consistent with density functional theory calculations.

The alloying behaviour of materials is a well-known problem in all kinds of compounds. Revealing the heteroatomic distributions in two-dimensional crystals is particularly critical for their practical use as nano-devices. Here we obtain statistics of the homo- and heteroatomic coordinates in single-layered Mo1−xWxS2 from the atomically resolved scanning transmission electron microscope images and successfully quantify the degree of alloying for the transition metal elements (Mo or W). The results reveal the random alloying of this mixed dichalcogenide system throughout the chemical compositions (x=0 to 1). Such a direct route to gain an insight into the alloying degree on individual atom basis will find broad applications in characterizing low-dimensional heterocompounds and become an important complement to the existing theoretical methods.

Raman spectroscopy (RS) has been used as a technique for the characterization of well-aligned IrO

Iridium dioxide (IrO 2 ) nanorods with pointed tips have been grown on Si(100) and transition-metal-coated-Si(100) substrates, via metal-organic chemical vapor deposition (MOCVD), using (MeCp)Ir(COD) as the source reagent. The as-deposited nanorods were characterized using field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). FESEM micrographs revealed that the majority of the nanorods are a wedge shape in cross section and converge at top; occasionally several of them pack into a column of a spiral tip. The vertical alignment and packing density are significantly improved by prior deposition of a thin layer of Ti on Si. TEM and XRD results indicate that the sputtered Ti thin layer erects the nanorods in the c-axis direction. XPS spectra show that iridium in IrO 2 nanorods also exist in a higher oxidation state.

The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with the sizes of 10s to 100s of micrometers were synthesized and prepared by the chemical vapor transport method using ICl3 as a transport agent. Many vacancies and surface imperfection states have been found in the bulk and on the surface of the microplate because of the intrinsic defect nature of α-In2Se3. To discover physical and chemical properties and finding technological uses of α-In2Se3, several experiments including transmission electron miscopy (TEM), X-ray photoelectron spectroscopy (XPS), surface photovoltage (SPV), photoluminescence (PL), surface photoresponse (SPR), photoconductivity (PC), and thermoreflectance (TR) measurements have been carried out. Experimental results of TEM, XPS, SPV, PL, and SPR measurements show that a surface oxidation layer α-In2Se3-3xO3x (0 ≤ x ≤ 1) has formed on the crystal face of α-In2Se3 in environmental air with the inner layer content close to In2Se3 but the outermost layer content approaching In2O3. The near band edge transitions of α-In2Se3 microplates have been probed experimentally by TR and PC measurements. The direct band gap of α-In2Se3 has been determined to be 1.453 eV. The SPV result shows a maximum quantum efficiency of the surface oxide α-In2Se3-3xO3x (0 ≤ x ≤ 1) that presents a peak photoresponse near 2.18 eV. The analyses of SPV, SPR, PL, TR, and PC measurements revealed that the surface oxide layer facilitates the conversion of the ultraviolet to the visible range while the native defects (Se and In vacancies) sustain photoconductivity in the near-infrared region. On the basis of the experimental results a wide-energy-range photodetector that combines PC- and SPR-mode operations for α-In2Se3 microplate has been made. The testing results show a well-behaved function of photoelectric conversion in the near-infrared to ultraviolet region via the auxiliary forming of surface oxide on the crystalline face of the α-In2Se3 microplates.