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We report an electrically pumped distributed feedback silicon evanescent laser. The laser operates continuous wave with a single mode output at 1600 nm. The laser threshold is 25 mA with a maximum output power of 5.4 mW at 10 degrees C. The maximum operating temperature and minimum line width of the laser are 50 degrees C, and 3.6 MHz, respectively.

Efficient wavelength conversion via four-wave-mixing in silicon-on-isolator p-i-n waveguides has been realized. By reverse biasing the p-i-n diode structure formed along the silicon rib waveguide, the nonlinear absorption due to two photon absorption induced free carrier absorption is significantly reduced, and a wavelength conversion efficiency of -8.5 dB has been achieved in an 8 cm long waveguide at a pump intensity of 40 MW/cm2. A high-speed pseudo-random bit sequence data at 10 Gb/s rate is converted to a new wavelength channel in the C-band with clear open eye diagram and no waveform distortion. Conversion efficiency as functions of pump power, wavelength detuning, and bias voltages, have been investigated. For shorter waveguides of 1.6 cm long, a conversion bandwidth of > 30 nm was achieved.

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Abstract:We demonstrate an electrically-pumped hybrid silicon microring laser fabricated by a self-aligned process. The compact structure (D = 50 µm) and small electrical and optical losses result in lasing threshold as low as 5.4 mA and up to 65 °C operation temperature in continuous-wave (cw) mode. The spectrum is single mode with large extinction ratio and small linewidth observed. Application as on-chip optical interconnects is discussed from a system perspective. ©2009 Optical Society of America

We report the integration of a hybrid silicon evanescent waveguide photodetector with a hybrid silicon evanescent optical amplifier. The device operates at 1550 nm with a responsivity of 5.7 A/W and a receiver sensitivity of -17.5 dBm at 2.5 Gb/s. The transition between the passive silicon waveguide and the hybrid waveguide of the amplifier is tapered to increase coupling efficiency and to minimize reflections.

A new way to make high speed modulators using Si waveguides is demonstrated. The hybrid silicon evanescent electroabsorption modulator with offset AlGaInAs quantum wells has an extinction ratio over 10 dB and modulation bandwidth of 10 GHz. The modulator has a clean open eye at 10 Gb/s with sub-volt drive.

We present a monolithic integrated Raman silicon laser based on silicon-on-insulator (SOI) rib waveguide race-track ring resonator with an integrated p-i-n diode structure. Under reverse biasing, we achieved stable, single mode, continuous-wave (CW) lasing with output power exceeding 30mW and 10% slope efficiency. The laser emission has high spectral purity with a measured side mode suppression exceeding 70dB and laser linewidth of <100 kHz. This laser architecture allows for on-chip integration with other silicon photonics components to provide a highly integrated and scaleable monolithic device.