2008
DOI: 10.1364/oe.16.009936
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High speed hybrid silicon evanescent electroabsorption modulator

Abstract: A new way to make high speed modulators using Si waveguides is demonstrated. The hybrid silicon evanescent electroabsorption modulator with offset AlGaInAs quantum wells has an extinction ratio over 10 dB and modulation bandwidth of 10 GHz. The modulator has a clean open eye at 10 Gb/s with sub-volt drive.

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Cited by 87 publications
(63 citation statements)
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“…Hydrophilic bonding, adhesion, and hybrid integration techniques for photonic microelectronic fabrication have generated a useful set of active and passive optical components for integration into microelectronic devices [2]. Some of the many photonic structures created include Fabry-Perot cavities [16,19], racetrack rings [20], mode-lock lasers [21], microdisks [22], distributed feedback lasers [23], distributed Bragg reflectors [24], micro-rings [25] lasers, amplifiers [26], PIN [27], metal-semiconductor-metal junctions [28] photodetectors, electroabsorption modulators [29], Mach-Zehnder interferometers [30], micro-disk modulators [31], and high-speed switches [32]. More advanced integration circuits have also been demonstrated [28,33].…”
Section: Integration Of Photonic Components Into Microelectronicsmentioning
confidence: 99%
“…Hydrophilic bonding, adhesion, and hybrid integration techniques for photonic microelectronic fabrication have generated a useful set of active and passive optical components for integration into microelectronic devices [2]. Some of the many photonic structures created include Fabry-Perot cavities [16,19], racetrack rings [20], mode-lock lasers [21], microdisks [22], distributed feedback lasers [23], distributed Bragg reflectors [24], micro-rings [25] lasers, amplifiers [26], PIN [27], metal-semiconductor-metal junctions [28] photodetectors, electroabsorption modulators [29], Mach-Zehnder interferometers [30], micro-disk modulators [31], and high-speed switches [32]. More advanced integration circuits have also been demonstrated [28,33].…”
Section: Integration Of Photonic Components Into Microelectronicsmentioning
confidence: 99%
“…The pyramids at the top of p-InP layer are results of HCl wet etching during InP substrate removal due to the damaged outer InGaAs layer. With this epilayer transferring technology, the two disparate materials Si and III-V's now can be brought together to realize a variety of active devices on Si, such as lasers (Fang et al, 2006;Fang et al, 2008;Sun et al, 2009), amplifiers (Park et al, 2007a), modulators Kuo et al, 2008), and detectors (Park et al, 2007b). To take the hybrid Si lasers for an example: as seen in Fig.…”
Section: Bonding Proceduresmentioning
confidence: 99%
“…Several key components have been successfully demonstrated on the hybrid silicon evanescent platform, such as lasers [4], optical ampliers [5], tunable lters [6] and photodetectors [7]. Furthermore, electroabsorption modulators and grating couplers for silicon platform are the key elements for the optical interconnects, especially for the inter-chip interconnects using the SOI wafer [8].…”
Section: Introductionmentioning
confidence: 99%