A distributed feedback silicon evanescent laser

Fang, Alexander W.; Lively, Erica; Kuo, Ying-Hao; Liang, Di; Bowers, John E.

doi:10.1364/oe.16.004413

Cited by 210 publications

(132 citation statements)

References 9 publications

Supporting

Mentioning

128

Contrasting

Unclassified

Order By: Relevance

“…The kinks observed in I ph -I curves at lower stage temperatures and higher output optical power levels are similar to those reported by Fang et al [5] and are attributed to instabilities in the laser optical output caused by the reflections from the corrugations of the adjacent DFB lasers, which are located on the same Si rib waveguide. As the current injection increases, the device heats up and this changes the phase of the reflected light resulting in instabilities in the total optical output.…”

Section: Device Characterizationsupporting

confidence: 86%

“…Among several types of hybrid III-V/Si lasers, evanescently coupled devices show a great potential for industrial-scale fabrication. Most of the previously demonstrated, evanescently coupled hybrid lasers, including Fabry-Perot [1]- [3], distributed Bragg reflector (DBR) [4], and distributed-feedback (DFB) lasers [5] were based on a molecular (direct) wafer bonding technique which Manuscript received on August 23, 2012. This work was supported by a grant from Intel Corporation and partly supported by the EU-commission through the ERC-grant ULPPIC.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Hybrid III–V/Si Distributed-Feedback Laser Based on Adhesive Bonding

Stanković

Jones

Sysak

et al. 2012

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

Abstract-A hybrid, evanescently coupled III-V/Silicon distributed-feedback laser with an integrated monitor photodiode, based on adhesive divinyl siloxane-benzocyclobutene bonding and emitting at 1310 nm is presented. An output power of ~ 2.85 mW is obtained in continuous wave (CW) regime at 10 °C. The threshold current is 20 mA and a side mode suppression ratio of 45dB is demonstrated. Optical feedback is provided via corrugations on top of the silicon rib waveguide while a specially developed bonding procedure yields 40nm-thick adhesive bonding layers, enabling efficient evanescent coupling.

show abstract

Section: Device Characterizationsupporting

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Hybrid III–V/Si Distributed-Feedback Laser Based on Adhesive Bonding

Stanković

Jones

Sysak

et al. 2012

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

show abstract

“…Although silicon is not suited as a light emitter or detector in the infrared, several approaches have been demonstrated to integrate lasers and detectors on a silicon platform [2][3][4][5] modulators and detectors, is an important requirement. This can be achieved by using e.g.…”

Section: Introductionmentioning

confidence: 99%

Realization of a Compact Optical Interconnect on Silicon by Heterogeneous Integration of III–V

Spuesens

Bauwelinck

Régrény

et al. 2013

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

Abstract-We present a compact optical interconnect on a silicon-on-insulator platform consisting of a directly modulated microdisk laser and detector connected via a silicon waveguide. A single III-V epitaxial structure that contains layers for both the laser and detector ensures that dense integration becomes possible. All fabrication steps for the laser and detector, except for the detector mesa, are carried out simultaneously. The microdisk laser has a threshold current of 0.45 mA and a slope efficiency of 57 µW/mA. The responsivity of the detectors is 0.69 A/W. The full optical link has a static efficiency of 3% and a bandwidth of 7.6 GHz. A large signal modulation was applied and a 10 Gb/s bit pattern could be resolved.Index Terms-Heterogeneous integration, microdisk laser (MDL), optical interconnect, photonic integration, silicon photonics, waveguide photodetector.

show abstract

“…Hydrophilic bonding, adhesion, and hybrid integration techniques for photonic microelectronic fabrication have generated a useful set of active and passive optical components for integration into microelectronic devices [2]. Some of the many photonic structures created include Fabry-Perot cavities [16,19], racetrack rings [20], mode-lock lasers [21], microdisks [22], distributed feedback lasers [23], distributed Bragg reflectors [24], micro-rings [25] lasers, amplifiers [26], PIN [27], metal-semiconductor-metal junctions [28] photodetectors, electroabsorption modulators [29], Mach-Zehnder interferometers [30], micro-disk modulators [31], and high-speed switches [32]. More advanced integration circuits have also been demonstrated [28,33].…”

Section: Integration Of Photonic Components Into Microelectronicsmentioning

confidence: 99%

Electrospinning for nano- to mesoscale photonic structures

et al. 2016

View full text Add to dashboard Cite

Abstract:The fabrication of photonic and electronic structures and devices has directed the manufacturing industry for the last 50 years. Currently, the majority of small-scale photonic devices are created by traditional microfabrication techniques that create features by processes such as lithography and electron or ion beam direct writing. Microfabrication techniques are often expensive and slow. In contrast, the use of electrospinning (ES) in the fabrication of microand nano-scale devices for the manipulation of photons and electrons provides a relatively simple and economic viable alternative. ES involves the delivery of a polymer solution to a capillary held at a high voltage relative to the fiber deposition surface. Electrostatic force developed between the collection plate and the polymer promotes fiber deposition onto the collection plate. Issues with ES fabrication exist primarily due to an instability region that exists between the capillary and collection plate and is characterized by chaotic motion of the depositing polymer fiber. Material limitations to ES also exist; not all polymers of interest are amenable to the ES process due to process dependencies on molecular weight and chain entanglement or incompatibility with other polymers and overall process compatibility. Passive and active electronic and photonic fibers fabricated through the ES have great potential for use in light generation and collection in optical and electronic structures/ devices. ES produces fiber devices that can be combined with inorganic, metallic, biological, or organic materials for novel device design. Synergistic material selection and postprocessing techniques are also utilized for broad-ranging applications of organic nanofibers that span from biological to electronic, photovoltaic, or photonic. As the ability to electrospin optically and/or electronically active materials in a controlled manner continues to improve, the complexity and diversity of devices fabricated from this process can be expected to grow rapidly and provide an alternative to traditional resource-intensive fabrication techniques.

show abstract

A distributed feedback silicon evanescent laser

Cited by 210 publications

References 9 publications

Hybrid III–V/Si Distributed-Feedback Laser Based on Adhesive Bonding

Hybrid III–V/Si Distributed-Feedback Laser Based on Adhesive Bonding

Realization of a Compact Optical Interconnect on Silicon by Heterogeneous Integration of III–V

Electrospinning for nano- to mesoscale photonic structures

Contact Info

Product

Resources

About