In this paper, a novel Omega-Gate heterojunction tunneling field effect transistor (HTFET) is proposed by decreasing the gate coverage of gate-all-around (GAA) HTFET. Compared with GAA HTFET, Omega-Gate HTFET maximizes the electrostatic gate control while minimizing the device area, and it has a smaller natural length, not scarifying the high driving capability. A new analytical model is proposed for Omega-Gate HTFET. By introducing an overlap coefficient of η that is based on the Omega-Gate structure, the natural length can be calibrated more accurately. I-V characteristics can be obtained by using the PPA method and tunneling mechanism equations. The model can be verified by Technology Computer Aided Design (TCAD) simulations applying GaAs 0.5 Sb 0.5 /In 0.53 Ga 0.47 As Omega-Gate HTFET. It is shown that the tunneling rate of Omega-Gate HTFET is five times that of tri-gate HTFET, its natural length can be scaled down a maximum of 38%, and it has an excellent drive capability compared with GAA HTFET.
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