An Improved Silicon-Controlled Rectifier (SCR) for Low-Voltage ESD Application

Du, Feibo; Liou, Juin J.; Hou, Fei; Song, Wenqiang; Chen, Long; Nie, Yanlin; Qing, Yihong; Xu, Yong; Liu, Zhiwei

doi:10.1109/ted.2019.2961124

Cited by 18 publications

(6 citation statements)

References 14 publications

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“…In addition, over-voltage entering the battery is also prevented by the regulator [19]. When the battery is fully charged, the DC voltage supply will be cut off, thereby reducing damage, namely long battery life.…”

Section: Methodsmentioning

confidence: 99%

“…The figure also shows the Ih current, namely the holding current that keeps the SCR ON. As already explained, the SCR is conductive, it remains conductive even though the gate current is removed, that is, a power failure on the SCR changes the state from conduction (ON) to non-conducting (OFF) [19], [28]. Substitution or substitution is the process of turning off the SCR.…”

Section: Methodsmentioning

confidence: 99%

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Battery charger regulator with fully controlled return 15 V/5 A in uninterruptible power supply

Hasibuan,

Daud,

Hutagalung

et al. 2024

IJAPE

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Fully controlled rectifier and BCR. The battery charge regulator (BCR) is the most important unit of an uninterruptible power supply (UPS) device. The BCR uses a 15 V/5 A transformer to lower the voltage so as not to overload the BCR components. Full control using four thyristors serves to supply voltage to the BCR, while the BCR serves to regulate battery charging. Forcing the battery to be charged at a constant voltage with the same current results in shorter battery life. Battery charging through the BCR is set to match the battery voltage, then allowing the BCR to control it by adjusting the phase voltage to 13.5 V for high voltage discharge (HVD) and 10.5 V for low voltage discharge (LVD). By using an IC Regulator combined with a relay as a voltage breaker for a fully charged battery, it will automatically disconnect to avoid overcharging the battery. Based on the performance test results of a fully controlled rectifier system using thyristors and BCR on a 12V/5Ah battery, the output voltage is as a fully controlled 12 V rectifier, the BCR switch can charge the internal battery in minutes with a current that varies between 2.1 A to 0.1 A.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Battery charger regulator with fully controlled return 15 V/5 A in uninterruptible power supply

Hasibuan,

Daud,

Hutagalung

et al. 2024

IJAPE

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show abstract

“…These ESD protection requirements are necessary for industry-level chips to withstand any potential electrostatic disturbances. Currently, commonly used on-chip ESD protection devices include diodes [3], gate-grounded NMOS (GGNMOS) [4,5], and silicon-controlled rectifiers (SCRs) [6,7]. Diodes have a simple structure and fast response speed, typically used for low-voltage I/O protection, but they are not suitable for circuits with operating voltages above 3.3 V. Increasing the number of diodes in series leads to higher conduction resistance and leakage current.…”

Section: Introductionmentioning

confidence: 99%

Dual-directional SCR device with dual-gate controlled mechanism for ESD protection in photoelectric chip

Liu,

Wang,

Yang

et al. 2024

Semicond. Sci. Technol.

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The dual-directional silicon-controlled rectifier (DDSCR) is an electrostatic discharge (ESD) protection device. It can provide positive and negative ESD surge paths and has excellent robustness. However, industry-level sensors operating in strong electromagnetic interference environments impose higher reliability requirements on photoelectric chips. This paper proposed a novel DDSCR with a dual-gate controlled mechanism. By incorporating the gate diode triggering and the gate field modulation mechanism into the traditional DDSCR, and further utilizing additional parasitic PNP transistors for diversion, the proposed device exhibits significantly improved ESD characteristics. Measurement results indicate that, compared to DDSCR, the proposed device exhibits a 27.5% reduction in trigger voltage (Vt1), a 96.1% improvement in holding voltage (Vh), and achieves an equivalent Human Body Model (HBM) protection level of 11.45 kV, demonstrating exceptional design area efficiency. The experimental findings validate the effectiveness of the proposed device in 5 V photoelectric chip applications.

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“…Electrostatic discharge (ESD) is the major cause of IC failure in manufacturing, transportation, PCB mounting, and the operation of electronic products [1]. With the development of ultra-low-power integrated circuits, the operation voltage has been down-scaled continuously from the 5 V TTL-compatible voltage to 3.3 V, then 1.2 V, and now 0.8 V for low-power ICs [2][3][4][5]. A bidirectional ESD device is needed for protecting pins with an operating voltage varying between positive and negative values, and a bidirectional silicon-controlled rectifier (BSCR) capable of operating in the NS and PS modes of ESD stresses is suitable for such an application [6].…”

Section: Introductionmentioning

confidence: 99%

High Area Efficiency Bidirectional Silicon-Controlled Rectifier for Low-Voltage Electrostatic Discharge Protection

Chen,

Zhao,

Zhou

et al. 2023

Electronics

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Continuously scaling down and decreasing operation voltages of ICs, from the 5 V TTL-compatible voltage to 3.3 V, then 1.2 V, and now 0.8 V for low-power ICs, results in more stringent electrostatic discharge protection design requirements, such as a narrow ESD design window, low operation voltage, and high ESD robustness. Based on traditional diode string and diode-triggered silicon-controlled rectifiers, an enhanced diode-triggered silicon-controlled rectifier is proposed to meet the requirements of low-voltage integrated circuits as bidirectional electrostatic discharge protection. The new device employs an additional PMOS and NMOS in the N-well and P-well, respectively, to offer additional current paths along the surface to significantly enhance its robustness. TCAD simulation shows that the device is triggered by both the diode strings and embedded MOS, making the device turn on faster and the current distribution more uniform during the ON state owing to the additional surface current paths. The proposed new device has excellent dual-directional ESD protection performance with a figure of merit of 4.01 mA/um2, which is about a 71% improvement compared with the conventional diode-triggered silicon-controlled rectifier. It also has higher area efficiency, lower trigger voltage, lower current leakage, and a faster turn-on speed. The proposed enhanced diode-triggered silicon-controlled rectifier is an attractive ESD protection solution for ultra-low-voltage ICs.

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An Improved Silicon-Controlled Rectifier (SCR) for Low-Voltage ESD Application

Cited by 18 publications

References 14 publications

Battery charger regulator with fully controlled return 15 V/5 A in uninterruptible power supply

Battery charger regulator with fully controlled return 15 V/5 A in uninterruptible power supply

Dual-directional SCR device with dual-gate controlled mechanism for ESD protection in photoelectric chip

High Area Efficiency Bidirectional Silicon-Controlled Rectifier for Low-Voltage Electrostatic Discharge Protection

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