Compact and Low Leakage Devices for Bidirectional Low-Voltage ESD Protection Applications

Du, Feibo; Qing, Yihong; Hou, Fei; Zou, Kepeng; Song, Wenqiang; Chen, Ruibo; Liu, Jizhi; Chen, Le; Liou, Juin J.; Liu, Zhiwei

doi:10.1109/led.2021.3054964

Cited by 9 publications

(2 citation statements)

References 10 publications

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“…With the development of ultra-low-power integrated circuits, the operation voltage has been down-scaled continuously from the 5 V TTL-compatible voltage to 3.3 V, then 1.2 V, and now 0.8 V for low-power ICs [2][3][4][5]. A bidirectional ESD device is needed for protecting pins with an operating voltage varying between positive and negative values, and a bidirectional silicon-controlled rectifier (BSCR) capable of operating in the NS and PS modes of ESD stresses is suitable for such an application [6]. Though bidirectional ESD protection based on a simple back-to-back diode string has a good area efficiency ratio and a low trigger voltage under a positive bias state, it easily results in a large turn-on resistance (Ron) and Electronics 2023, 12, 4011 2 of 11 leakage current at the PN junction [7].…”

Section: Introductionmentioning

confidence: 99%

High Area Efficiency Bidirectional Silicon-Controlled Rectifier for Low-Voltage Electrostatic Discharge Protection

Chen,

Zhao,

Zhou

et al. 2023

Electronics

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Continuously scaling down and decreasing operation voltages of ICs, from the 5 V TTL-compatible voltage to 3.3 V, then 1.2 V, and now 0.8 V for low-power ICs, results in more stringent electrostatic discharge protection design requirements, such as a narrow ESD design window, low operation voltage, and high ESD robustness. Based on traditional diode string and diode-triggered silicon-controlled rectifiers, an enhanced diode-triggered silicon-controlled rectifier is proposed to meet the requirements of low-voltage integrated circuits as bidirectional electrostatic discharge protection. The new device employs an additional PMOS and NMOS in the N-well and P-well, respectively, to offer additional current paths along the surface to significantly enhance its robustness. TCAD simulation shows that the device is triggered by both the diode strings and embedded MOS, making the device turn on faster and the current distribution more uniform during the ON state owing to the additional surface current paths. The proposed new device has excellent dual-directional ESD protection performance with a figure of merit of 4.01 mA/um2, which is about a 71% improvement compared with the conventional diode-triggered silicon-controlled rectifier. It also has higher area efficiency, lower trigger voltage, lower current leakage, and a faster turn-on speed. The proposed enhanced diode-triggered silicon-controlled rectifier is an attractive ESD protection solution for ultra-low-voltage ICs.

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Section: Introductionmentioning

confidence: 99%

High Area Efficiency Bidirectional Silicon-Controlled Rectifier for Low-Voltage Electrostatic Discharge Protection

Chen,

Zhao,

Zhou

et al. 2023

Electronics

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“…The stacked diode structure is a simple method to reduce effective capacitance, but at the same time it increases on‐resistance [2]. Silicon controlled rectifiers (SCRs) manifest themselves as low capacitance, low device area and high ESD robustness, and attract much research [3]. However, the parasitic capacitance still has a notable negative impact as the frequency increases.…”

Section: Introductionmentioning

confidence: 99%

A compact broadband ESD protection circuit using multi‐layer helical inductor

Zou

Tang

Zhu

2021

Electronics Letters

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Here, a broadband electrostatic discharge (ESD) protection circuit using area-efficient multi-layer helical inductors is presented. The proposed concept was verified in a 0.18 μm 1P6M CMOS process, and the circuit area is only 54 × 63 μm 2 . The measurement results show that a bandwidth of around 30 GHz is achieved, and the impedance matching is kept under -20 dB up to 40 GHz. The measured TLP and VF-TLP currents reach 2.19 and 5.80 A, respectively, which indicates a good ESD robustness.

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Effect of NC pins ESD test on the reliability of integrated circuits with high density BGA package

Ma²,

Zhang³

et al. 2022

Microelectronics Reliability

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Compact and Low Leakage Devices for Bidirectional Low-Voltage ESD Protection Applications

Cited by 9 publications

References 10 publications

High Area Efficiency Bidirectional Silicon-Controlled Rectifier for Low-Voltage Electrostatic Discharge Protection

High Area Efficiency Bidirectional Silicon-Controlled Rectifier for Low-Voltage Electrostatic Discharge Protection

A compact broadband ESD protection circuit using multi‐layer helical inductor

Effect of NC pins ESD test on the reliability of integrated circuits with high density BGA package

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