In addition to being initially developed as an energy driver for an inertial confinement fusion, an intense, pulsed, light-ion beam (LIB) has been found to be applied to materials science. If a LIB is used to irradiate targets, a high-density ‘‘ablation’’ plasma is produced near the surface since the range of the LIB in materials is very short. Since the first demonstration of quick preparation of thin films of ZnS by an intense, pulsed, ion-beam evaporation (IBE) using the LIB-produced ablation plasma, various thin films have been successfully prepared, such as of ZnS:Mn, YBaCuO, BaTiO3, cubic BN, SiC, ZrO2, ITO, B, C, and apatite. Some of these data will be presented in this paper, with its analytic solution derived from a one-dimensional, hydrodynamic, adiabatic expansion model for the IBE. The temperature will be deduced using ion-flux signals measured by a biased ion collector. Reasonable agreement is obtained between the experiment and the simulation. High-energy LIB implantation to make chemical compounds and the associated surface modification are also discussed.
Nanosize powders of alumina have been synthesized by high-density ablation plasma produced by the irradiation of an intense, pulsed, light-ion beam on an aluminum target in oxygen. Diameters of the powders, which are observed to be spherical, are typically 5–25 nm. At 1 Torr of oxygen, nanosize powders of aluminum are synthesized with those of a small amount of γ-alumina. At 10 Torr of oxygen, on the other hand, γ-alumina powders are produced with a small amount of aluminum powders. Annealing characteristics in nitrogen have also been studied on the transition from γ- to α-alumina.
The crystallographic and electroluminescent characteristics of ZnS:Mn thin films prepared by radio frequency ion plating technique J. Vac. Sci. Technol. A 8, 43 (1990); 10.1116/1.576416 Preparation and characterization of ZnS thin films produced by metalorganic chemical vapor deposition
Barium titanate (BaTiO3) thin films were successfully prepared in situ on Al/SiO2/Si(100) substrates by backside deposition from intense, pulsed, ion-beam evaporation using a 1.3 MeV, 50 ns, 25 J/cm2 ion beam. Good morphology of the films prepared was observed, where no droplets appear compared to normal frontal-side deposition. The deposition rates were typically 100 nm/shot. The films were perovskite polycrystals. The capacitance of the thin films (at 1 kHz) increased from 3 to 10 nF/mm2 with increasing substrate temperature from 25 to 250 °C, respectively.
Electroluminescent ZnS:Mn thin films have been guickly deposited by a high-density, high-temperature plasma produced by the irradiation of an intense (>GW/cm2), pulsed (∼tens of ns) ion beam onto a ZnS:Mn target. The films prepared on a glass substrate have a polycrystalline hexagonal structure. The temperature of the target plasma was estimated to be ∼2.7 eV, where the plasma was highly ionized. The instantaneous deposition rate was estimated to be ∼4 cm/s, which is at least five orders of magnitude higher than that of any other conventional evaporation techique. We have prepared a ZnS:Mn electroluminescent device with a luminescent layer having a thickness of ∼200 nm. The device has a threshold voltage of ∼80 V0p (zero to peak value). The maximum luminance of 195 cd/m2 has been obtained under 10 kHz sinusoidal excitation at 144 V0p.
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