Preparation and characteristics of ZnS thin films by intense pulsed ion beam

Shimotori, Y.; Yokoyama, M.; Isobe, Hironobu; Harada, Shigetoshi; Masugata, Katsumi; Yatsui, Kiyoshi

doi:10.1063/1.340044

Cited by 84 publications

(10 citation statements)

References 5 publications

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“…However, it is already reported that intense pulsed-ion beam evaporation (IBE) method enables us to deposit crystallized boron-carbide thin films without substrate heating and post annealing [5]. IBE is newly developed high-speed thin film deposition process [6,7]. High density ablation plasma produced by irradiation of pulsed ion-beam onto the target is solidified on the substrate and thin film with almost the same composition as that of target is formed.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric properties of boron-carbide thin film and thin film based thermoelectric device fabricated by intense-pulsed ion beam evaporation

Sasaki

Takeda

Yokoyama

et al. 2005

Science and Technology of Advanced Materials

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Crystallized B 13 C 2 thin films were fabricated by intense pulsed-ion beam evaporation (IBE) method. Electrical conductivity and Seebeck coefficients of the obtained films were 1!10 K4 l/Um and 200 mV/K at 1000 K, respectively. These values were comparable to those of bulks. For the application of the thin films, since reasonable thermoelectric (TE) properties were confirmed for the B 13 C 2 films fabricated, we attempted to develop 'in-plane' type TE device using B 13 C 2 and SrB 6 as p-type and n-type elements, respectively. With applying temperature difference to the fabricated device, thermo-electromotive force and electrical power were generated from the device we made, indicating that the device worked as a TE device. To the best of our knowledge, this is the first demonstration of the TE device composed of only boron-rich solids. q

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Section: Introductionmentioning

confidence: 99%

Thermoelectric properties of boron-carbide thin film and thin film based thermoelectric device fabricated by intense-pulsed ion beam evaporation

Sasaki

Takeda

Yokoyama

et al. 2005

Science and Technology of Advanced Materials

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“…For thin film preparation by IBE, a pulse power generator ('ETIGO-II') with a magnetically insulating ion diode [15] was used. A cathode and an anode were placed in a chamber which was evacuated to a pressure of 1 x 10 -4 Torr.…”

Section: Methodsmentioning

confidence: 99%

Thermoelectric Properties of B_12+xC_3-x Thin Films Prepared by Pulsed Ion-Beam Evaporation

et al. 2001

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Thin films of boron carbide (B 12+x C 3-x ) were prepared on glass substrates by a pulsed ion-beam evaporation method. A pulsed proton beam with an energy of 1 MV (peak) and a current of 60 kA was focused on sintered B 12+x C 3-x targets. Ablation plasma was formed from the irradiated targets and thin films were prepared on Pyrex and SiO 2 glass substrates at room temperature. From results of X-ray diffraction, the thin films consisted of a B 12+x C 3-x phase. Using a known relationship between the composition and the lattice parameters, the composition of B 12+x C 3-x thin films was estimated to be x = 0.3 and 1.0, which were close to the nominal composition of the targets. These results indicate that B 12+x C 3-x with different carbon contents has been successfully prepared by IBE without substrate heating or sample annealing. Thermoelectric properties of the thin films were measured. A B 12+x C 3-x thin film with estimated composition of x =0.9 exhibited the highest power factor at room temperature among the B 12+x C 3-x samples reported.

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“…Recently, however, these ion beams with ion energies from 50 keV to 10 MeV, ion currents from 1 kA to 10 MA, and pulse durations from 10 to 1000 ns have been finding new applications in diverse fields such as materials processing [4], [5]. Because of the short range of the ions in matter, its application usually involves the surface modification of materials, e.g., implantation [6], alloy mixing [7], [8], defect formation [9], [10], and thin-film deposition [11], [12]. For many of these applications, these beams are used primarily as heat sources to ablate or rapidly melt solid targets.…”

Section: Introductionmentioning

confidence: 99%

Characteristic Observation of Intense Pulsed Aluminum Ion Beam in Magnetically Insulated Ion Diode With Vacuum Arc Ion Source

Ito

Fujikawa

Miyake

et al. 2009

IEEE Trans. Plasma Sci.

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Intense pulsed heavy ion beam has been developed for a range of applications, including materials processing, particle accelerator injection for fundamental nuclear physics research, and other fundamental and applied purposes. For those applications, it is very important to generate high-purity ion beams with various ion species. We have developed a magnetically insulated ion diode for the generation of intense pulsed metallic ion beams in which the vacuum arc plasma gun is used as the metal ion source. The ion diode was operated at a diode voltage of about 200 kV, a diode current of about 15 kA, and a pulse duration of about 100 ns, and an ion beam with an ion current density of > 200 A/cm 2 and a pulse duration of 40 ns was obtained at 50 mm downstream from the anode. By evaluating the ion species and the energy spectrum of the ion beam via a Thomson parabola spectrometer, it was confirmed that the ion beam consists of aluminum ions (Al + , Al 2+ , and Al 3+ ) of energy 60-740 keV and proton impurities of energy 90-150 keV. The purity of the beam was estimated to be 89%, which is much higher than that of the pulsed ion beam produced in the conventional ion diode.Index Terms-Intense pulsed heavy ion beam, magnetically insulated ion diode (MID), pulsed power technology, vacuum arc plasma gun.

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Preparation and characteristics of ZnS thin films by intense pulsed ion beam

Abstract: The crystallographic and electroluminescent characteristics of ZnS:Mn thin films prepared by radio frequency ion plating technique J. Vac. Sci. Technol. A 8, 43 (1990); 10.1116/1.576416 Preparation and characterization of ZnS thin films produced by metalorganic chemical vapor deposition

Cited by 84 publications

References 5 publications

Thermoelectric properties of boron-carbide thin film and thin film based thermoelectric device fabricated by intense-pulsed ion beam evaporation

Thermoelectric properties of boron-carbide thin film and thin film based thermoelectric device fabricated by intense-pulsed ion beam evaporation

Thermoelectric Properties of B_12+xC_3-x Thin Films Prepared by Pulsed Ion-Beam Evaporation

Characteristic Observation of Intense Pulsed Aluminum Ion Beam in Magnetically Insulated Ion Diode With Vacuum Arc Ion Source

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Preparation and characteristics of ZnS thin films by intense pulsed ion beam

Abstract: The crystallographic and electroluminescent characteristics of ZnS:Mn thin films prepared by radio frequency ion plating technique J. Vac. Sci. Technol. A 8, 43 (1990); 10.1116/1.576416 Preparation and characterization of ZnS thin films produced by metalorganic chemical vapor deposition

Cited by 84 publications

References 5 publications

Thermoelectric properties of boron-carbide thin film and thin film based thermoelectric device fabricated by intense-pulsed ion beam evaporation

Thermoelectric properties of boron-carbide thin film and thin film based thermoelectric device fabricated by intense-pulsed ion beam evaporation

Thermoelectric Properties of B12+xC3-x Thin Films Prepared by Pulsed Ion-Beam Evaporation

Characteristic Observation of Intense Pulsed Aluminum Ion Beam in Magnetically Insulated Ion Diode With Vacuum Arc Ion Source

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Thermoelectric Properties of B_12+xC_3-x Thin Films Prepared by Pulsed Ion-Beam Evaporation