The implantation induced transition from the ordered to the disordered state of Ga0.52In0.48P/(Al0.35Ga0.65)0.5In0.5P–layers was investigated by means of Ar+ ion implantation, rapid thermal annealing (RTA) and photoluminescence spectroscopy. The implantation dose and annealing temperature dependence of the luminescence was studied in the dose range from 1×109 cm-2 to 5×1013 cm-2 and in the temperature range from 500°C up to 1025°C. By an Ar+ dose of 2×1012 cm-2 the temperature of the order-disorder transition can be decreased by about 200°C compared to the transition temperature of only annealed samples. For annealing temperatures higher than 700°C a dose variation by less than one order of magnitude causes an emission energy blue shift of the GaInP luminescence band by about 100 meV due to a complete disordering of the previously ordered layers.
The thermally induced transition from the ordered to the disordered state of Ga0.52In0.48P/(Al0.35Ga0.65)In0.5P layers was investigated by means of rapid thermal annealing and photoluminescence spectroscopy. The annealing temperature and annealing time dependence of the luminescence was studied in the temperature range from 500 up to 1050 °C and for annealing times between 5 and 600 s. Within a very small temperature range of less than 40° we observe an emission energy blue shift of the GaInP luminescence band by about 100 meV. The shift occurs due to a complete disordering of the previously ordered layers without a simultaneous destruction of the heterostructure. The photoluminescence of the quaternary AlGaInP barrier was also observed and shows a simultaneous blue shift of about 90 meV due to an order-disorder transition.
Articles you may be interested inCompetition of compressive strain with substrate misorientation in CuPt-type ordered GaInP/AlGaInP quantum wells Buried semiconductor wires have been fabricated using the order/disorder transition in GalnP/ AIGaInP due to ion implantation and annealing. The transition has been investigated as a function of annealing temperature and implantation dose. In order to induce this transition locally, gold wires were defined as implantation masks by a lift-off process. After low dose implantation and annealing a lateral potential wen is formed, due to the band gap difference between the ordered and the disordered state. The photoluminescence even of the narrowest wire structures shows two sharp and well separated emission bands, due to the recombination in the masked wire areas and in the lateral barrier.
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