Selective order–disorder transition in GaInP/AlGaInP: A new approach for the definition of buried quantum wires

Hamisch, Y.

doi:10.1116/1.585975

Cited by 9 publications

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4.4 Quantum-wire structures

Klingshirn¹

Landolt-Börnstein - Group III Condensed Matter

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A rather commonly used possibility is to grow a single or multiple quantum well and to create a wire by nanolithography and dry or wet etching ( Fig. 4.84a). To protect the side walls of the well, one uses sometimes overgrowth with the barrier material. Examples are found in [88F1, 88G1, 88K1, 91G2, 92G1, 93C1, 94I1, 94I2, 94K4, 95S4] and for the creation of nano-pillars in [99K2].An alternative method is to intermix the well and the barrier material by ion-beam bombardment or laser beam-induced thermal interdiffusion except for the region of the wire and to anneal the samples subsequently to cure the defects. In this case the lateral confining potential is smooth and not step-like as in Fig. 4.84a and generally also lower. Examples are found in [86C1, 88F1, 91C3, 91Y1, 92B2, 92S2, 93C1, 93P1, 95D1, 95D2]. Ref. p. 276] 4.4 Quantum-wire structures 265 Landolt-Börnstein New Series III/34C1 Landolt-Börnstein New Series III/34C1 GaAs (and Al 1− − − −y Ga y As) wiresAccording to the general outline of this chapter on III-V compounds, we start again in 4.4.2.1 with the optical properties in the low-and intermediate-density regimes of excitons, biexcitons or trions including intersubband transition and continue in 4.4.2.2 with the high-density regime and with plasma effects.

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et al. 1998

Physica E: Low-dimensional Systems and Nanostructures

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Selective order–disorder transition in GaInP/AlGaInP: A new approach for the definition of buried quantum wires

Cited by 9 publications

References 0 publications

4.4 Quantum-wire structures

4.4 Quantum-wire structures

4.4.5 References for 4.4

Ordering in GaInP: Is it relevant for devices?

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