Two EPR spectra are resolved in quenched silicon; one is attributed to a surface damage formed during the quench and the other to the interstitial iron (Fe0) previously identified by Woodbury and Ludwig in Fe-diffused silicon. The enthalpy and entropy for the Fe0 formation are determined to be 2.39 (±0.03) eV and 3.3 (±0.3) K, respectively. The migration energy of Fe0 is 0.69 (±0.03) eV. The transition-metal ion is present in as-grown silicon and moves to the Td interstitial site upon heat treatment.
Hydrogen implantations into silicon samples at room temperature and at 190°C are carried out. Infrared studies are performed on these samples before and following annealing. Previously observed divacancy and hydrogen vibrational bands are found as well as higher‐order‐bands not previously found in proton irradiation. In addition new hydrogen vibrational bands and other bands are observed and discussed.
Six new EPR spectra are reported which are apparently due to intrinsic defects created in the neutron-irradiation and, in some cases, annealing of silicon. In addition a spectrum similar to, but distinct from, that due to the vacancy-phosphorus center is reported. Some tentative defect models are discussed to emphasize the features of the spectra, but more detailed studies are required to establish the identity of the defects giving rise to these spectra.
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