Six new EPR spectra are reported which are apparently due to intrinsic defects created in the neutron-irradiation and, in some cases, annealing of silicon. In addition a spectrum similar to, but distinct from, that due to the vacancy-phosphorus center is reported. Some tentative defect models are discussed to emphasize the features of the spectra, but more detailed studies are required to establish the identity of the defects giving rise to these spectra.
Articles you may be interested inHyperfine splitting of EPR spectra of paramagnetic centers created by gamma irradiation of cesium trihydrogen selenite J. Chem. Phys. 74, 2671 (1981); 10.1063/1.441435
EPR and ENDOR studies of CO2 − centers in x and uvirradiated single crystals of sodium formateElectron spin resonance studies have been made of natural diamond crystals electron-irradiated at room temperature. A radiation-induced spectrum is identified as arising from a new anisotropic S= 1 center. The S=1 center is characterized by: gl=2.0026, g2=2.0021, ga=2.0016; D 1 ==r27(10-4 cm-I ), D2 ==r25(1o-4 cm-I ) , Da=±51 (10-4 cm-I ). Associated with each resonance line are four sets of weaker lines which are ascribed to hyperfine interaction with lac (/=1,1.1% abundant) at four nonequivalent sets of sites. The identity of the defect has not yet been established.
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