Infrared absorption of silicon irradiated by protons

Герасименко, Н. Н.; Rolle, Massimo; Cheng, Li‐Jen; Lee, Y. H.; Corelli, J. C.; Corbett, J. W.

doi:10.1002/pssb.2220900230

Cited by 69 publications

(12 citation statements)

References 23 publications

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“…5͒. Since the original work by Stein, a number of additional Si-H absorption lines have been observed in proton-implanted silicon 77,78 or silicon grown in a H 2 ambient and subsequently irradiated with electrons 79,80 or neutrons. 81 At present, more than 30 distinct absorption lines have been observed in the frequency region associated with Si-H stretch modes.…”

Section: Crystalline Siliconmentioning

confidence: 99%

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Vibrational lifetimes of hydrogen in silicon

Lüpke

Tolk

Feldman

2003

Journal of Applied Physics

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Characterization of defect and impurity reactions, dissociation, and migration in semiconductors requires a detailed understanding of the rates and pathways of vibrational energy flow, of the energy transfer channels, and of the coupling mechanisms between local modes and the phonon bath of the host material. Significant progress in reaching this goal has been accomplished in recent landmark studies exploring the excitation and dynamics of vibrational states associated with hydrogen in silicon. The lifetime of the Si-H stretch mode is found to be extremely dependent on the local solid-state structure, ranging from picoseconds for interstitial-like hydrogen, hundreds of picoseconds for hydrogen-vacancy complexes, to several nanoseconds for hydrogen bonded to Si surfaces-over three orders of magnitude variation. Such large variations in lifetime ͑transition probability͒ are extraordinarily rare in solid-state science. The level of theoretical investigation into the vibrational lifetime of the Si-H oscillator is less advanced. This state of affairs is partly because of the difficulties in explicitly treating slow relaxation processes in complex systems, and partly because, as suggested by experiment, a highly anharmonic coupling mechanism is apparently responsible for the ͑multiphonon͒ relaxation process. Even more importantly, because of the high frequency of the Si-H stretching motion, a quantum mechanical treatment of the Si-H oscillator is required. A combination of Bloch-Redfield theory and molecular dynamics simulation seems promising in describing the relaxation process of the Si-H vibrational modes. It is the aim of this review article to present a comprehensive overview of the recent accomplishments, current understandings, and future directions in this emerging field of time-resolved vibrational spectroscopy of point defects in solids.

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Section: Crystalline Siliconmentioning

confidence: 99%

“…In addition, a number of lines have been observed in the region 550-900 cm Ϫ1 , which are ascribed to angular vibrations of Si-H bonds. 77,78…”

Section: Crystalline Siliconmentioning

confidence: 99%

Vibrational lifetimes of hydrogen in silicon

Lüpke

Tolk

Feldman

2003

Journal of Applied Physics

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“…9 It has to be noted that not only LVMs of fully hydrogenated vacancies have been reported, but also those of partially hydrogenated vacancies VH, VH 2 , or VH 3 in silicon. 8 A H-related absorption mode at 2178 cm −1 at RT has also been reported in proton implanted samples 10 and in FZ silicon grown in hydrogen atmosphere. 11 This mode was observed at LHeT in C-rich silicon 12 at 2183.32 (2183) cm −1 with a full width at half maximum (FWHM) of 0.12 cm −1 .…”

Section: Introductionmentioning

confidence: 71%

Si isotopic structure of the infrared absorption of the fully hydrogenated vacancy in silicon

Clerjaud

Pajot²

2013

The Journal of Chemical Physics

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An infrared absorption spectrum consisting in three lines observed around 2223 cm(-1) at liquid helium temperature characterizes a defect common in silicon crystals containing hydrogen. Several investigations of this spectrum have converged towards its assignment to a fully hydrogenated lattice vacancy defect V(Si-H)4. However, the fact that the ratios of the intensities of the three lines have been reported to be proportional to the natural abundances of the three silicon isotopes suggests that only one Si atom is involved in the defect, apparently contradicting the above assignment. In this paper, the spectroscopic investigation of this defect is revisited and the Si-related isotopic structures of V(Si-H)4 and V(Si-D)4 defects are modeled. It is shown that the near proportionalities observed between the intensities of these lines and the abundances of the Si isotopes are fortuitous. Our analysis of the isotope dependence of the 2223 cm(-1) line finds the V(Si-H)4 model to be correct and that the model of a single interstitial Si atom complexed with H can be rejected. The investigation is extended to the analysis of tetra-hydrogenated vacancy trapped by a carbon atom.

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“…Among several peaks, the sharp peak at about 2223 cm Ϫ1 has been studied extensively. Bech Nielsen et al, 17 for example, determined the symmetry of the defect responsible for this peak by measuring its response to uniaxial stresses. Figure 3 shows a summary of absorption peaks observed in specimens grown in a hydrogen ambient and protonimplanted specimens.…”

Section: Methodsmentioning

confidence: 99%

Optical absorption study of Si grown in a hydrogen ambient

Suezawa

1998

Journal of Applied Physics

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Articles you may be interested inComplementary infrared and transmission electron microscopy studies of the effect of high temperature-high pressure treatments on oxygen-related defects in irradiated silicon Hydrogen-defect complexes formed by neutron irradiation of hydrogenated silicon observed by optical absorption measurement J. Appl. Phys. 91, 5831 (2002); 10.1063/1.1468910 Study of the conversion of the VO to the VO 2 defect in silicon heat-treated under uniform stress conditions

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Infrared absorption of silicon irradiated by protons

Cited by 69 publications

References 23 publications

Vibrational lifetimes of hydrogen in silicon

Vibrational lifetimes of hydrogen in silicon

Si isotopic structure of the infrared absorption of the fully hydrogenated vacancy in silicon

Optical absorption study of Si grown in a hydrogen ambient

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