Optical absorption study of Si grown in a hydrogen ambient

Suezawa, Masashi

doi:10.1063/1.366921

Cited by 15 publications

(5 citation statements)

References 17 publications

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“…Many obvious characteristics and new phenomena appear due to it, e.g., many Si-H stretching vibrational infrared (IR) absorption peaks have been measured, 1,2) H-related traps, 3) H-induced platelets 4) and defects 5) form in H-containing Si and hydrogen can passivate some shallow acceptors and deep centers because of its reactivity with defects 6) and suppress swirls in Si during growth. 7) Therefore, the study on hydrogen in Si is very attractive and interesting.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen-Defect Shallow Donors in Si

Kang

Bai

2001

Jpn. J. Appl. Phys.

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The influence of different original Si crystals and neutron fluence on the formation of hydrogen-defect shallow donors in neutron-irradiated floating-zone silicon grown in hydrogen atmosphere (FZ Si:H 2 ) is studied. The annealing behavior of neutron-irradiated floating-zone silicon grown in argon atmosphere (FZ Si:Ar), neutron-irradiated FZ Si:H 2 kept for three years at room temperature (RT) and only fast-neutron-irradiated FZ Si:H 2 reveals that shallow donors are directly related to hydrogen and defects, especially to thermal-neutron-radiation point defects. The maximum concentration of the shallow donors approaches to a stable value with an increase in neutron fluence. Some characteristics of the shallow donors are discussed.

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Section: Introductionmentioning

confidence: 99%

Hydrogen-Defect Shallow Donors in Si

Kang

Bai

2001

Jpn. J. Appl. Phys.

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“…Further work by Suezawa 18,19 demonstrates that there is a growth in the intensity of the modes match experiment well (within ∼ 5 cm −1 ) in the isotopically pure cases, the higher dimensional (T 2 and E) modes and those of the isotopically mixed molecules are of poorer agreement (∼ 60 cm −1 ). This leads to an incorrect ordering of some of the vibrational levels, when compared with experiment.…”

Section: Introductionmentioning

confidence: 88%

Self-interstitial–hydrogen complexes in silicon

et al. 1999

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The vibrational properties of interstitial silane (SiH 4) i and silyl (SiH 3) i molecules in crystalline silicon are calculated using a first-principle, cluster based, spin-polarised local-density method. The Si-H stretch modes are found to be red-shifted by ∼ 300 cm −1 from those of the isolated molecule which lie around 2200 cm −1. These results refute recent suggestions that modes observed around 2200 cm −1 , and previously assigned to hydrogenated vacancy defects, are due to these interstitial molecules.

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“…For the case of VH and VH 2 the reconstruction of the remaining dangling bonds occurs. There is still some debate concerning this model [74,75,76]. Calculations performed on VH 3 in both the positive and neutral charge states predict a trigonal symmetry (C 3v ).…”

Section: Vh M Defects In Siliconmentioning

confidence: 99%