Photo-EPR experiments on defects in irradiated silicon

Lee, Y. H.; Bilash, T. D.; Corbett, J. W.

doi:10.1080/00337577608233476

Cited by 37 publications

(14 citation statements)

References 4 publications

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“…It is responsible for more than 90% of the change in the effective doping concentration. Taking into account that its ionization energy is within the limits of the V 2 O defect in a neutral charge state as determined from photo-EPR, 10 we conclude that the I E level detected in this work is most probably connected to the V 2 O complex.…”

Section: Dlts (T) Is Given Bysupporting

confidence: 65%

Close to midgap trapping level in Co60 gamma irradiated silicon detectors

Pintilie

Fretwurst²,

Lindström³

et al. 2002

Applied Physics Letters

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The deep level transient spectroscopy method was applied on standard and oxygenated float-zone silicon detectors exposed to high doses of Co60–gamma irradiation. We have detected and characterized a close to midgap trapping level having an ionization energy of EC−(0.545±0.005) eV and electron/hole capture cross sections of σn=(1.7±0.2)×10−15 cm2/σp=(9±1)×10−14 cm2 respectively. This level has a strong impact on the detector performance being responsible for more than 90% of the change in the effective doping concentration. The defect is strongly oxygen related and a possible connection with the V2O complex is discussed.

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Section: Dlts (T) Is Given Bysupporting

confidence: 65%

Close to midgap trapping level in Co60 gamma irradiated silicon detectors

Pintilie

Fretwurst²,

Lindström³

et al. 2002

Applied Physics Letters

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“…The energy levels have been taken from [10] and [11]. The energy levels of the species CCI, COI etc.…”

Section: Deep Acceptor Candidatesmentioning

confidence: 99%

“…They are not therefore considered important in determining N eff . The strongest candidate for the deep acceptor state is the divacancy-oxygen (V 2 O) complex [10,13]. …”

Section: Deep Acceptor Candidatesmentioning

confidence: 99%

Defect evolution in silicon detector material

MacEvoy

1997

Nuclear Instruments and Methods in Physics Research Section A:

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“…The quadratic dose dependence (2 nd order generation) of the I p -center was previously found both for the STFZ and DOFZ diodes up to irradiation doses of 2.80 MGy [48,50,51] and is displayed in vacancies and interstitials are mobile) it was suggested that the best candidate is the long searched for defect complex V 2 O. The V 2 O is the only one defect generated by a second order process that was evidenced by Electron Paramagnetic Resonance [53,54] as direct result of irradiation. On the other hand, there are studies based on the annealing of V 2 at high temperatures of diodes irradiated with small dose values that revealed the transformation of V 2 into another defect X in oxygen rich silicon [55,56].…”

Section: Deep Acceptor I Pmentioning

confidence: 99%

Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

Pintilie

Lindstroem

Junkes

et al. 2009

Nuclear Instruments and Methods in Physics Research Section A:

125

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This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60 Co-γ rays, 6 and 15 MeV electrons, 23 GeV protons and reactor neutrons revealed the existence of point defects and cluster related centers having a strong impact on damage properties of Si diodes. The detailed relation between the "microscopic" reasons as based on defect analysis and their "macroscopic" consequences for detector performance are presented. In particular, it is shown that the changes in the Si device properties after exposure to high levels of 60 Co-γ doses can be completely understood by the formation of two point defects, both depending strongly on the oxygen concentration in the silicon bulk. Specific for hadron irradiation are the annealing effects which decrease respectively increase the originally observed damage effects as seen by the changes of the depletion voltage. A group of three cluster related defects, revealed as deep hole traps, proved to be responsible specifically for the reverse annealing. Their formation is not affected by the oxygen content or silicon growth procedure suggesting that they are complexes of multi-vacancies located inside extended disordered regions.

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Photo-EPR experiments on defects in irradiated silicon

Cited by 37 publications

References 4 publications

Close to midgap trapping level in Co60 gamma irradiated silicon detectors

Close to midgap trapping level in Co60 gamma irradiated silicon detectors

Defect evolution in silicon detector material

Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

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