In this study, a facile and effective approach to synthesize high-quality perovskite-quantum dots (QDs) hybrid film is demonstrated, which dramatically improves the photovoltaic performance of a perovskite solar cell (PSC). Adding PbS QDs into CH NH PbI (MAPbI ) precursor to form a QD-in-perovskite structure is found to be beneficial for the crystallization of perovskite, revealed by enlarged grain size, reduced fragmentized grains, enhanced characteristic peak intensity, and large percentage of (220) plane in X-ray diffraction patterns. The hybrid film also shows higher carrier mobility, as evidenced by Hall Effect measurement. By taking all these advantages, the PSC based on MAPbI -PbS hybrid film leads to an improvement in power conversion efficiency by 14% compared to that based on pure perovskite, primarily ascribed to higher current density and fill factor (FF). Ultimately, an efficiency reaching up to 18.6% and a FF of over ≈0.77 are achieved based on the PSC with hybrid film. Such a simple hybridizing technique opens up a promising method to improve the performance of PSCs, and has strong potential to be applied to prepare other hybrid composite materials.

NiO is a promising hole-transporting material for perovskite solar cells due to its high hole mobility, good stability, and easy processability. In this work, we employed a simple solution-processed NiO film as the hole-transporting layer in perovskite solar cells. When the thickness of the perovskite layer increased from 270 to 380 nm, the light absorption and photogenerated carrier density were enhanced and the transporting distance of electron and hole would also increase at the same time, resulting in a large charge transfer resistance and a long hole-extracted process in the device, characterized by the UV-vis, photoluminescence, and electrochemical impedance spectroscopy spectra. Combining both of these factors, an optimal thickness of 334.2 nm was prepared with the perovskite precursor concentration of 1.35 M. Moreover, the optimal device fabrication conditions were further achieved by optimizing the thickness of NiO hole-transporting layer and PCBM electron selective layer. As a result, the best power conversion efficiency of 15.71% was obtained with a J of 20.51 mA·cm, a V of 988 mV, and a FF of 77.51% with almost no hysteresis. A stable efficiency of 15.10% was caught at the maximum power point. This work provides a promising route to achieve higher efficiency perovskite solar cells based on NiO or other inorganic hole-transporting materials.

Low-temperature processed GQDs and SnO2 nanoparticles composites (G@SnO2) have been prepared through a facile synthetic path. Facilitated electron transfer and suppressed interfacial charge recombination enable flexible perovskite solar cells with superb efficiency and excellent durability.

The combination of perovskite solar cells and quantum dot solar cells has significant potential due to the complementary nature of the two constituent materials. In this study, solar cells (SCs) with a hybrid CH NH PbI /SnS quantum dots (QDs) absorber layer are fabricated by a facile and universal in situ crystallization method, enabling easy embedding of the QDs in perovskite layer. Compared with SCs based on CH NH PbI , SCs using CH NH PbI /SnS QDs hybrid films as absorber achieves a 25% enhancement in efficiency, giving rise to an efficiency of 16.8%. The performance improvement can be attributed to the improved crystallinity of the absorber, enhanced photo-induced carriers' separation and transport within the absorber layer, and improved incident light utilization. The generality of the methods used in this work paves a universal pathway for preparing other perovskite/QDs hybrid materials and the synthesis of entire nontoxic perovskite/QDs hybrid structure.

A 2D/3D heterostructure was formed based on inorganic CsPbI2Br perovskite, contributing to a high efficiency device with enhanced stability.

Inverted perovskite solar cells (PSCs) have been becoming more and more attractive, owing to their easy-fabrication and suppressed hysteresis, while the ion diffusion between metallic electrode and perovskite layer limit the long-term stability of devices. In this work, we employed a novel polyethylenimine (PEI) modified cross-stacked superaligned carbon nanotube (CSCNT) film in the inverted planar PSCs configurated FTO/NiO /methylammonium lead tri-iodide (MAPbI)/6, 6-phenyl C61-butyric acid methyl ester (PCBM)/CSCNT:PEI. By modifying CSCNT with a certain concentration of PEI (0.5 wt %), suitable energy level alignment and promoted interfacial charge transfer have been achieved, leading to a significant enhancement in the photovoltaic performance. As a result, a champion power conversion efficiency (PCE) of ∼11% was obtained with a V of 0.95 V, a J of 18.7 mA cm, a FF of 0.61 as well as negligible hysteresis. Moreover, CSCNT:PEI based inverted PSCs show superior durability in comparison to the standard silver based devices, remaining over 85% of the initial PCE after 500 h aging under various conditions, including long-term air exposure, thermal, and humid treatment. This work opens up a new avenue of facile modified carbon electrodes for highly stable and hysteresis suppressed PSCs.

Hematite electron transporting layer based planar perovskite cells were developed with reduced hysteresis and good stability in ambient air.

Critical roles of potassium in charge-carrier balance and diffusion induced defect passivation for highly efficient inverted PSCs are revealed.