In this study, a facile and effective approach to synthesize high-quality perovskite-quantum dots (QDs) hybrid film is demonstrated, which dramatically improves the photovoltaic performance of a perovskite solar cell (PSC). Adding PbS QDs into CH NH PbI (MAPbI ) precursor to form a QD-in-perovskite structure is found to be beneficial for the crystallization of perovskite, revealed by enlarged grain size, reduced fragmentized grains, enhanced characteristic peak intensity, and large percentage of (220) plane in X-ray diffraction patterns. The hybrid film also shows higher carrier mobility, as evidenced by Hall Effect measurement. By taking all these advantages, the PSC based on MAPbI -PbS hybrid film leads to an improvement in power conversion efficiency by 14% compared to that based on pure perovskite, primarily ascribed to higher current density and fill factor (FF). Ultimately, an efficiency reaching up to 18.6% and a FF of over ≈0.77 are achieved based on the PSC with hybrid film. Such a simple hybridizing technique opens up a promising method to improve the performance of PSCs, and has strong potential to be applied to prepare other hybrid composite materials.

The melt blending of polylactide (PLA) and thermoplastic polyurethane (TPU) elastomer was performed in an effort to toughen the PLA. The phase morphology, mechanical properties, and toughening mechanism of the PLA/TPU blends were investigated. The results indicate that the spherical TPU particles dispersed in the PLA matrix, and the uniformity decreased with increasing TPU content. There existed long threads among some TPU droplets in blend with 30 wt % TPU. TPU improved the toughness of the PLA. With 30 wt % TPU, the elongation at break of the blend reached 602.5%, and samples could not be broken in the notched Izod impact tests at room temperature. The matrix ligament thickness of the PLA/TPU blends was below the critical value, and the blends deformed to a large extent because of shear yield caused by debonding, the formation of fibers upon impact; this dissipated a large amount of energy.

Coexistence of negative differential resistance (NDR) and resistive switching (RS) memory is observed using a Ag|TiOx|F‐doped‐SnO2 memory cell at room temperature. Unlike other reports, the coexistence of NDR and RS strongly depends on the relative humidity levels at room temperature. The NDR disappears when the cells are placed in a dry air ambient (H2O < 5 ppm) or in vacuum, but the coexistence emerges and gradually becomes obvious after the cells are exposed to ambient air with relative humidity of 35%, and then becomes dramatically enhanced as the relative humidity becomes higher. Due to the excellent stability and reversibility of the coexistence of NDR and RS, a multilevel RS memory is developed at room temperature. Hydroxide ion (OH−) is induced by gas‐phase water‐molecule splitting on the surface and interface of the memory cell. The OH− interacts with oxygen vacancies and transports in the bulk of memory cell to facilitate the migration of Ag ions and oxygen vacancies along grain boundaries. These processes are responsible for the moisture‐modulated and room‐temperature coexistence. This work demonstrates moisture‐modulated coexistence of NDR and RS for the first time and gives an insight into the influence of water molecules on transition‐metal‐oxide‐based RS memory systems.

Low-temperature processed GQDs and SnO2 nanoparticles composites (G@SnO2) have been prepared through a facile synthetic path. Facilitated electron transfer and suppressed interfacial charge recombination enable flexible perovskite solar cells with superb efficiency and excellent durability.

The combination of perovskite solar cells and quantum dot solar cells has significant potential due to the complementary nature of the two constituent materials. In this study, solar cells (SCs) with a hybrid CH NH PbI /SnS quantum dots (QDs) absorber layer are fabricated by a facile and universal in situ crystallization method, enabling easy embedding of the QDs in perovskite layer. Compared with SCs based on CH NH PbI , SCs using CH NH PbI /SnS QDs hybrid films as absorber achieves a 25% enhancement in efficiency, giving rise to an efficiency of 16.8%. The performance improvement can be attributed to the improved crystallinity of the absorber, enhanced photo-induced carriers' separation and transport within the absorber layer, and improved incident light utilization. The generality of the methods used in this work paves a universal pathway for preparing other perovskite/QDs hybrid materials and the synthesis of entire nontoxic perovskite/QDs hybrid structure.