This paper presents a detailed investigation of trapping effect in AlGaN/GaN high-electron-mobility transistors (HEMTs) based on the pulsed current-voltage characterization, drain voltage transient (DVT) measurement, and capacitance deep-level transient spectroscopy (C-DLTS). By monitoring the drain voltage transients at various filling voltages and temperatures, the properties of three electron traps were obtained with the DVT measurements. Specifically, the energy levels of the former two traps were determined to be 0.28 and 0.48 eV, which was confirmed by the C-DLTS measurement performed on the same device. In addition, a third temperature-independent trap located in the GaN buffer was observed only with the DVT measurement, indicating the advantage of transient curves measurement in characterizing the traps insensitive to temperature. The combined measurements demonstrate the correlation of different techniques, which allows identifying the same trap levels to investigate the physical origin of traps.
The temperature and thermal resistance of Ga 2 O 3 Schottky barrier diodes were investigated using electrical methods with temperature-sensitive electrical parameters and the structure function method. The analysis was based on the voltage of the Schottky junction as a temperature-sensitive parameter so as to measure the junction temperature of Ga 2 O 3 Schottky barrier diodes. The junction-case thermal resistance of the Ga 2 O 3 Schottky barrier diodes was accurately extracted by the transient dual interface test method to be 39.04 • C W −1 , which increased slightly with the increase of power current. In addition, the temperature extracted with the electrical method was compared with the result of infrared measurements, which indicated that the temperature extracted with the infrared was significantly higher than the result of the electrical method. This difference can be explained in that the temperature extracted by the electrical method was the temperature of the active region of the device, whereas the result of infrared presented the maximum temperature of the device. Furthermore, the low thermal conductivity of Ga 2 O 3 resulted in temperature inhomogeneity on the device surface and further increased the temperature difference. This study provides a convenient and non-destructive method for rapid measurement of the thermal characteristics of the Ga 2 O 3 Schottky barrier diodes, and enables rapid evaluation of the whole thermal system.
Measurements of thermal boundary resistance (TBR) are of great significance in the fields of electronic packaging and thermal management. In this study, a measurement method based on a designed 1 × 1 mm2 chip with a heat source separated from a temperature sensor was developed. The chip consists of a temperature sensor with nine Schottky diodes connected in series and a heat source composed of metal wires, which are separated by SiO2 to realize electrical isolation. With this chip, the TBR of samples can be extracted from transient temperature response curves of GaN on a Si wafer using the structure function and transient dual interface test methods. In particular, the surface of samples was etched with uniform arrays to increase the measurement accuracy. The TBR measurements of four samples etched on the same wafer under different conditions were 1.62 ± 0.22 × 10−8, 1.6 ± 0.38 × 10−8, 1.49 ± 0.18 × 10−8, and 1.6 ± 0.35 × 10−8 m2K/W, indicating consistency of the results. This chip effectively expands the application of the structure function method to TBR measurements, which can be helpful for further research on interfacial heat transport.
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