A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

Li, Xuan; Feng, Shiwei; Liu, Chang; Zhang, Yamin; Bai, Kun; Xiao, Yu‐Xuan; Zheng, Xiu Cheng; He, Xiaobin; Pan, Shijie; Lin, Gang; Bai, Lin

doi:10.1109/ted.2020.3033259

Cited by 19 publications

(7 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…According to the biasing sequence in figure 2(a), a 30 s long filling process with various gate and drain voltages were applied on the device, and then the detrapping process was detected by monitoring the DVTs at conditions of (V GM ; I DM ) = (0 V; 200 mA) [21], as shown in figure 2(b). It indicated that the drain-source voltage (V DS ) was approximately 0.5 V under the above measurement conditions, and thus the power in the experiments was 0.1 W. The thermal resistance of the device was 7.3 • C W −1 with the structure function method [28], and thus the effect of the highest temperature rise of 0.73 • C can be negligible [19,29]. It can be noticed that the voltage transients in figure 2(b) gradually decreased to a steady state as time increased and can be explained as follows.…”

Section: Dvt Measurementsmentioning

confidence: 94%

Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy

Pan¹,

Feng²,

Li³

et al. 2022

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

This paper presents a detailed investigation of trapping effect in AlGaN/GaN high-electron-mobility transistors (HEMTs) based on the pulsed current-voltage characterization, drain voltage transient (DVT) measurement, and capacitance deep-level transient spectroscopy (C-DLTS). By monitoring the drain voltage transients at various filling voltages and temperatures, the properties of three electron traps were obtained with the DVT measurements. Specifically, the energy levels of the former two traps were determined to be 0.28 and 0.48 eV, which was confirmed by the C-DLTS measurement performed on the same device. In addition, a third temperature-independent trap located in the GaN buffer was observed only with the DVT measurement, indicating the advantage of transient curves measurement in characterizing the traps insensitive to temperature. The combined measurements demonstrate the correlation of different techniques, which allows identifying the same trap levels to investigate the physical origin of traps.

show abstract

Section: Dvt Measurementsmentioning

confidence: 94%

Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy

Pan¹,

Feng²,

Li³

et al. 2022

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

“…The junction temperature change of the device can be indirectly obtained by the temperature-sensitive parameter method [10]. And the transient thermal resistance of the junction to the environment at different time points can be calculated by equation (1).…”

Section: Analysis Of Input Characteristics Of Transient Response Signalsmentioning

confidence: 99%

Effect of discretization on the structure function method of artificial neural networks

Fan,

Wu,

Wei

et al. 2023

Fourth International Conference on Artificial Intelligence and Electromechanical Automation (AIEA 2023)

View full text Add to dashboard Cite

With the rapid development of power devices, the problem of thermal reliability of devices becomes more and more prominent, so how to accurately obtain the thermal resistance of devices is particularly critical. The traditional structure function method is the most effective method to analyze the thermal characteristics of power semiconductor devices at present, but the existing deconvolution algorithm has some problems, such as noise, uncertain number of iterations and long time. This paper presents a new structure function method based on ANN. Build model through ANN, and the sample set measured by Thermal resistance tester is used to train the ANN. Finally, the experimental results of discretization prove that discretization can be used as the output variable of the structural function method of artificial neural networks.

show abstract

“…The switching time between heating process and test process can be obviously shortened, thus the accuracy of temperature measurement can be improved. The detailed information of the measurement process can be found in [27][28][29].…”

Section: Sample Description and Experimental Detailsmentioning

confidence: 99%

“…In addition, with the development of the structure function method, the electrical method has become an important method of thermal reliability analysis to evaluate the thermal resistance composition of different structures in semiconductor devices [25][26][27][28][29]. The structure function method was used to analyze the temperature variation curve by electrical method, so as to extract the thermal resistance value of electronic devices and the composition of total thermal resistance, such as the thermal resistance value of chip to case, the thermal resistance value of case to atmosphere, respectively [25,26].…”

Section: Introductionmentioning

confidence: 99%

Characterization of thermal-resistance in Ga₂O₃ Schottky barrier diodes with temperature-sensitive electrical parameters

Feng

et al. 2021

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

The temperature and thermal resistance of Ga 2 O 3 Schottky barrier diodes were investigated using electrical methods with temperature-sensitive electrical parameters and the structure function method. The analysis was based on the voltage of the Schottky junction as a temperature-sensitive parameter so as to measure the junction temperature of Ga 2 O 3 Schottky barrier diodes. The junction-case thermal resistance of the Ga 2 O 3 Schottky barrier diodes was accurately extracted by the transient dual interface test method to be 39.04 • C W −1 , which increased slightly with the increase of power current. In addition, the temperature extracted with the electrical method was compared with the result of infrared measurements, which indicated that the temperature extracted with the infrared was significantly higher than the result of the electrical method. This difference can be explained in that the temperature extracted by the electrical method was the temperature of the active region of the device, whereas the result of infrared presented the maximum temperature of the device. Furthermore, the low thermal conductivity of Ga 2 O 3 resulted in temperature inhomogeneity on the device surface and further increased the temperature difference. This study provides a convenient and non-destructive method for rapid measurement of the thermal characteristics of the Ga 2 O 3 Schottky barrier diodes, and enables rapid evaluation of the whole thermal system.

show abstract

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

Cited by 19 publications

References 26 publications

Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy

Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy

Effect of discretization on the structure function method of artificial neural networks

Characterization of thermal-resistance in Ga₂O₃ Schottky barrier diodes with temperature-sensitive electrical parameters

Contact Info

Product

Resources

About

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

Cited by 19 publications

References 26 publications

Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy

Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy

Effect of discretization on the structure function method of artificial neural networks

Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters

Contact Info

Product

Resources

About

Characterization of thermal-resistance in Ga₂O₃ Schottky barrier diodes with temperature-sensitive electrical parameters