Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors Under Reverse Pulse Electrical Stress Using the Voltage-Transient Method

Lu, Xiaozhuang; Feng, Shiwei; Pan, Shijie; Li, Xuan; Bai, Kun; Zhu, Hongtu

doi:10.1109/tdmr.2023.3253957

IEEE Trans. Device Mater. Relib.

2023

DOI: 10.1109/tdmr.2023.3253957

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Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors Under Reverse Pulse Electrical Stress Using the Voltage-Transient Method

Xiaozhuang Lu

Shiwei Feng

Shijie Pan

et al.

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Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors Under Reverse Pulse Electrical Stress Using the Voltage-Transient Method

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