Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method

Pan, Shijie; Feng, Shiwei; Li, Xuan; Bai, Kun; Lu, Xiaozhuang; Zhu, Jiang; Zhang, Yamin; Zhou, Lixing

doi:10.1109/ted.2022.3193889

Cited by 3 publications

(1 citation statement)

References 42 publications

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“…The drain current transient (DCT) test involves applying large positive V ds bias, large negative V gs bias, or both to measure the change in I DS [48][49][50][51][52][53][54][55][56]. The transient current I DS can be expressed as…”

Section: Drain Current Transientmentioning

confidence: 99%

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

Zou,

Yang,

Qiao

et al. 2023

Micromachines

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Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been considered promising candidates for power devices due to their superior advantages of high current density, high breakdown voltage, high power density, and high-frequency operations. However, the development of GaN HEMTs has been constrained by stability and reliability issues related to traps. In this article, the locations and energy levels of traps in GaN HEMTs are summarized. Moreover, the characterization techniques for bulk traps and interface traps, whose characteristics and scopes are included as well, are reviewed and highlighted. Finally, the challenges in trap characterization techniques for GaN-based HEMTs are discussed to provide insights into the reliability assessment of GaN-based HEMTs.

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Section: Drain Current Transientmentioning

confidence: 99%

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

Zou,

Yang,

Qiao

et al. 2023

Micromachines

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Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Pan

Zhang

Feng

et al. 2023

IEEE Trans. Electron Devices

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Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si Substrates

2023

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Thermal dissipation is an important issue for power devices. In this work, the impact of thermal effects on the performance of Cu electroplated GaN-based high-electron-mobility transistors (HEMTs) are considered. Electrical, thermometry and micro-Raman characterization techniques were used to correlate the effects of improved heat dissipation on device performance for GaN HEMTs with different thicknesses of Si substrate (50, 100, 150 μm), with and without an additional electroplated Cu layer. GaN HEMTs on electroplated Cu on Si (≤50 μm) demonstrate an enhanced on/off current ratio compared to bare Si substrate by a factor of ~400 (from 9.61 × 105 to 4.03 × 108). Of particular importance, surface temperature measurements reveal a much lower channel temperature for thinner HEMT devices with electroplated Cu samples compared to those without.

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Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method

Cited by 3 publications

References 42 publications

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si Substrates

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