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This study contributes to the growing literature linking physical characteristics and behavioral tendencies by advancing the current debate on whether a person’s facial width-to-height ratio (fWHR) predicts a variety of antisocial tendencies. Specifically, our large-scale study avoided the social-desirability bias found in self-reports of behavioral tendencies by capturing survey data not only from more than 1,000 business executives but also from evaluators who reported knowing the focal individuals well. With this improved research design, and after conducting a variety of analyses, we found very little evidence of fWHR predicting antisocial tendencies. In light of prior research linking fWHR to social perceptions of evaluators, our results are suggestive of an evolutionary mismatch, whereby a physical characteristic once tied to antisocial tendencies in ancestral environments is—in modern environments—not predictive of such behaviors but instead predictive of biased perceptions.

Complex correlated states emerging from many-body interactions between quasiparticles (electrons, excitons and phonons) are at the core of condensed matter physics and material science. In low-dimensional materials, quantum confinement affects the electronic, and subsequently, optical properties for these correlated states. Here, by combining photoluminescence, optical reflection measurements and ab initio theoretical calculations, we demonstrate an unconventional excitonic state and its bound phonon sideband in layered silicon diphosphide (SiP2), where the bound electron–hole pair is composed of electrons confined within one-dimensional phosphorus–phosphorus chains and holes extended in two-dimensional SiP2 layers. The excitonic state and emergent phonon sideband show linear dichroism and large energy redshifts with increasing temperature. Our ab initio many-body calculations confirm that the observed phonon sideband results from the correlated interaction between excitons and optical phonons. With these results, we propose layered SiP2 as a platform for the study of excitonic physics and many-particle effects.

Defects in crystalline materials have a tremendous impact on their functional behavior. Controlling and tuning of these imperfections can lead to marked improvements in their physical, electrical, magnetic, and optical properties. Thanks to the development of aberration‐corrected (scanning) transmission electron microscopy (STEM/TEM), direct visualization of defects at multiple length scales has now become possible, including those critically important defects at the atomic scale. Thorough understanding of the nature and dynamics of these defects is the key to unraveling the fundamental origins of structure–property relationships. Such insight can therefore allow the creation of new materials with desired properties through appropriate defect engineering. Herein, several examples of new insights obtained from representative functional materials are shown, including piezoelectrics/ferroelectrics, oxide interfaces, thermoelectrics, electrocatalysts, and 2D materials.

The presence of rich polymorphs and stacking polytypes in molybdenum disulfide (MoS2) endows it with a diverse range of properties. This has stimulated a lot of interest in the unique properties associated with each polymorph. In article number https://doi.org/10.1002/adma.201802397, Kian Ping Loh and co‐workers discuss the use of electron microscopy for identifying the atomic structures of several important polymorphs in MoS2 and establishing the correlation between structure and properties.

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In recent years, our sensitivity for imaging and spectroscopy has dramatically improved due to aberration correction, greatly assisting the correlation of atomic-scale structure and bonding to materials' properties. Trial and error materials' development is increasingly being replaced by atomic scale engineering, informed by the powerful combination of microscopy and theoretical calculations. Here we present some recent applications of this approach to catalysts, batteries and thermoelectric materials.