Chemical enhancement is an important mechanism in surface-enhanced Raman spectroscopy. It is found that mildly reduced graphene oxide (MR-GO) nanosheets can significantly increase the chemical enhancement of the main peaks by up to 1 order of magnitude for adsorbed Rhodamine B (RhB) molecules, in comparison with the mechanically exfoliated graphene. The observed enhancement factors can be as large as ∼10(3) and show clear dependence on the reduction time of graphene oxide, indicating that the chemical enhancement can be steadily controlled by specific chemical groups. With the help of X-ray photoelectron spectra, these chemical species are identified and the origin of the observed large chemical enhancement can thus be revealed. It is shown that the highly electronegative oxygen species, which can introduce a strong local electric field on the adsorbed molecules, are responsible for the large enhancement. In contrast, the local defects generated by the chemical reduction show no positive correlation with the enhancement. Most importantly, the dramatically enhanced Raman spectra of RhB molecules on MR-GO nanosheets reproduce all important spectral fingerprints of the molecule with a negligible frequency shift. Such a unique noninvasive feature, along with the other intrinsic advantages, such as low cost, light weight, easy availability, and flexibility, makes the MR-GO nanosheets very attractive to a variety of practical applications.
A functional hybrid of reduced graphene oxide (RGO)-Fe 3 O 4 nanoparticles (NPs) has been chemically synthesized with exceptionally high yield and tunable RGO/Fe 3 O 4 ratio. The adsorption behaviors of a series of dyes using this hybrid as the adsorbent are systematically investigated in aqueous solutions through real-time monitoring of the fingerprint spectral changes of the dyes. The results show that, benefiting both from the surface property of RGO and from the magnetic property of Fe 3 O 4 , the hybrid possesses quite a good (although unoptimized) and versatile adsorption capacity to the dyes under investigation, and can be easily and rapidly extracted from water by magnetic attraction. Most importantly, it is found that by simply annealing in moderate conditions, this hybrid adsorbent can be easily and efficiently regenerated for reuse with hardly any compromise of the adsorption capacity. Furthermore, the adsorbability of this hybrid shows satisfactory tolerance against the variations in both pH environment and dye concentration. Even when exposed to a multi dye cocktail, the hybrid can work well without suppressing the adsorption capacity for each of the dyes, as compared with that measured separately. The inherent advantages of this nanostructured adsorbent, such as noncompromised adsorption capacity, low cost, easy, rapid extraction and regeneration, good tolerance, multiplex adsorbability, and handy operation, may pave a new, efficient and sustainable way towards highly-efficient dye pollutant removal in Earth's water environments.
We report a direct observation of surface dominated conduction in an intrinsic Bi(2)Se(3) thin film with a thickness of six quintuple layers grown on lattice-matched CdS (0001) substrates by molecular beam epitaxy. Shubnikov-de Haas oscillations from the topological surface states suggest that the Fermi level falls inside the bulk band gap and is 53 ± 5 meV above the Dirac point, which is in agreement with 70 ± 20 meV obtained from scanning tunneling spectroscopies. Our results demonstrate a great potential of producing genuine topological insulator devices using Dirac Fermions of the surface states, when the film thickness is pushed to nanometer range.
Exploring exciting and exotic physics, scientists are pursuing practical device applications for topological insulators. The Dirac-like surface states in topological insulators are protected by the time-reversal symmetry, which naturally forbids backscattering events during the carrier transport process, and therefore offers promising applications in dissipationless spintronic devices. Although considerable efforts have been devoted to controlling their surface conduction, limited work has been focused on tuning surface states and bulk carriers in Bi(2)Te(3) nanostructures by external field. Here we report gate-tunable surface conduction in Na-doped Bi(2)Te(3) topological insulator nanoplates. Significantly, by applying external gate voltages, such topological insulators can be tuned from p-type to n-type. Our results render a promise in finding novel topological insulators with enhanced surface states.
Topological insulators (TIs) are extraordinary materials that possess massless, Dirac-like topological surface states in which backscattering is prohibited due to the strong spin-orbit coupling. However, there have been reports on degradation of topological surface states in ambient conditions, which presents a great challenge for probing the original topological surface states after TI materials are prepared. Here, we show that in situ Al passivation inside a molecular beam epitaxy (MBE) chamber could inhibit the degradation process and reveal the pristine topological surface states. Dual evidence from Shubnikov-de Hass (SdH) oscillations and weak antilocalization (WAL) effect, originated from the π Berry phase, suggests that the helically spin-polarized surface states are well preserved by the proposed in situ Al passivation. In contrast, we show the degradation of surface states for the unpassivated control samples, in which the 2D carrier density is increased 39.2% due to ambient n-doping, the SdH oscillations are completely absent, and a large deviation from WAL is observed.
A palladium phosphide electrocatalyst supported on carbon black (PdP2@CB) shows efficient water splitting in both alkaline and neutral electrolytes. Significantly lower overpotentials are required for PdP2@CB (27.5 mV in 0.5 m H2SO4; 35.4 mV in 1 m KOH; 84.6 mV in 1 m PBS) to achieve a HER electrocatalytic current density of 10 mA cm−2 compared to commercial Pt/CB (30.1 mV in 0.5 m H2SO4; 46.6 mV in 1 m KOH; 122.7 mV in 1 m PBS). Moreover, no loss in HER activity is detectable after 5000 potential sweeps. Only 270 mV and 277 mV overpotentials are required to reach a current density of 10 mA cm−2 for PdP2@CB to catalyze OER in 1 m KOH and 1 m PBS electrolytes, which is better OER activity than the benchmark IrO2 electrocatalyst (301 mV and 313 mV to drive a current density of 10 mA cm−2). 1.59 V and 1.72 V are needed for PdP2@CB to achieve stable water splitting catalytic current density of 10 mA cm−2 in 1 m PBS and 50 mA cm−2 in 1 m KOH for 10 h, respectively.
Reduction of graphene oxide at the nanoscale is an attractive approach to graphene-based electronics. Here we use a platinum-coated atomic force microscope tip to locally catalyse the reduction of insulating graphene oxide in the presence of hydrogen. Nanoribbons with widths ranging from 20 to 80 nm and conductivities of >104 S m−1 are successfully generated, and a field effect transistor is produced. The method involves mild operating conditions, and uses arbitrary substrates, atmospheric pressure and low temperatures (≤115 °C).
We report the experiment of high quality epitaxial growth of Bi2Se3 thin films on hexagonal CdS (0001) substrates using a solid source molecular-beam epitaxy system. Layer-by-layer growth of single crystal Bi2Se3 has been observed from the first quintuple layer. The size of surface triangular terraces has exceeded 1 mu m. Angle-resolved photoemission spectroscopy clearly reveals the presence of Dirac-cone-shape surface states. Magneto-transport measurements demonstrate a high Hall mobility of similar to 6000 cm(2)/V s for the as-grown Bi2Se3 thin films at temperatures below 30 K. These characteristics of Bi2Se3 thin films promise a variety of potential applications in ultrafast, low-power dissipation devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3599540
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