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The III-V compound semiconductor, which has the advantage of wide bandgap and high electron mobility, has attracted increasing interest in the optoelectronics and microelectronics field. The poor electronic properties of III-V semiconductor surfaces resulting from a high density of surface/interface states limit III-V device technology development. Various techniques have been applied to improve the surface and interface quality, which cover sulfur-passivation, plasmas-passivation, ultrathin film deposition, and so on. In this paper, recent research of the surface passivation on III-V semiconductors was reviewed and compared. It was shown that several passivation methods can lead to a perfectly clean surface, but only a few methods can be considered for actual device integration due to their effectiveness and simplicity.

Blue luminescent carbon dots (CDs) were synthesized by the hydrothermal method. Blue-shifts of the maximum emission wavelength from 480 to 443 nm were observed when the concentration of CD solution decreased. The photoluminescence (PL) spectra of CDs at low concentration showed an excitation-independent behaviour, which is very different from the previous reports. Two different emitting mechanisms might work: the intrinsic luminescence from sp2-carbon networks can be responsible for the shorter wavelength part of emission (excitation-independent) at low concentration and the high polarity of nanosized clusters led to the excitation-dependent behaviour of the longer wavelength part at high concentration of CD solution. The photophysical property and concentration-dependent behaviour of the CDs offered new insights into CDs from the viewpoints of both experiments and mechanisms, which will promote diverse potential applications of CDs in the near future.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-017-2137-2) contains supplementary material, which is available to authorized users.

ZnO thin films were deposited on (001) Si substrate by low-pressure metalorganic chemical vapour deposition. Thermal annealing was performed at 800 • C in air for an hour. The effects of annealing on the surface morphology, stoichiometric ratio, structural and optical properties of ZnO films were investigated using scanning electron microscopy, x-ray photoemission spectroscopy (XPS), x-ray diffraction, Raman spectra and photoluminescence spectra. The resistivity of ZnO film increased to 1.25 × 10 2 cm after annealing. It was found that the quality of ZnO film could be improved through annealing.

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Heterojunction light-emitting diodes based on n-ZnO nanowires/ZnO single-crystalline films/p-GaN structure have been demonstrated for an improved electroluminescence performance. A highly efficient ultraviolet emission was observed under forward bias. Compared with conventional n-ZnO/p-GaN structure, high internal quantum efficiency and light extraction efficiency were simultaneously considered in the proposed diode. In addition, the diode can work continuously for ∼10 h with only a slight degradation in harsh environments, indicating its good reliability and application prospect in the future. This route opens possibilities for the development of advanced nanoscale devices in which the advantages of ZnO single-crystalline films and nanostructures can be integrated together.