The III-V compound semiconductor, which has the advantage of wide bandgap and high electron mobility, has attracted increasing interest in the optoelectronics and microelectronics field. The poor electronic properties of III-V semiconductor surfaces resulting from a high density of surface/interface states limit III-V device technology development. Various techniques have been applied to improve the surface and interface quality, which cover sulfur-passivation, plasmas-passivation, ultrathin film deposition, and so on. In this paper, recent research of the surface passivation on III-V semiconductors was reviewed and compared. It was shown that several passivation methods can lead to a perfectly clean surface, but only a few methods can be considered for actual device integration due to their effectiveness and simplicity.
RF sputtered thin film is deposited on the cavity surface of LD (laser diode) by plasma pretreatment. Firstly optimize the preparation process of film, and test the chemical ratio, reflectivity and optical absorption of the optimized film by EDX, spectrophotometer and surface thermal lens technology respectively, which verify the feasibility of used for facet coating film in LD process; then optimize the plasma cleaning process, and use PL to find out that sputtered passivation film by plasma pretreatment can increase the GaAs surface photoluminescence efficiency by 119%. Finally, a 10 nm thick passivation film is coated on cavity surface of LD with optimized plasma pretreatment, which leads to a higher reliability than the traditional LD.
In this study the effects of 1-Octadecanethiol (ODT, 1-CH3 [CH2]17SH) passivation on GaAs (100) surface and GaAs/Al2O3 MOS capacitors are investigated. The results measured by X-ray photoelectric spectroscopy (XPS), Raman spectroscopy and scan electron microscopy (SEM) show that the ODT passivation can obviously suppress the formation of As-O bonds and Ga-O bonds on the GaAs surface and produce good surface morphology at the same time, and especially provide better protection against environmental degradation for at least 24 h. The passivation time is optimized by photoluminescence (PL), and the maximum enhancement of PL intensity was 116%. Finally, electrical property of a lower leakage current was measured using the metal-oxide-semiconductor capacitor (MOSCAP) method. The results confirm the effectiveness of ODT passivation on GaAs (100) surface.
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