The III-V compound semiconductor, which has the advantage of wide bandgap and high electron mobility, has attracted increasing interest in the optoelectronics and microelectronics field. The poor electronic properties of III-V semiconductor surfaces resulting from a high density of surface/interface states limit III-V device technology development. Various techniques have been applied to improve the surface and interface quality, which cover sulfur-passivation, plasmas-passivation, ultrathin film deposition, and so on. In this paper, recent research of the surface passivation on III-V semiconductors was reviewed and compared. It was shown that several passivation methods can lead to a perfectly clean surface, but only a few methods can be considered for actual device integration due to their effectiveness and simplicity.
This paper reports one of a scalable, cost effective Ag nanowires (AgNWs) TE, which reveals a significant reduction of four orders in magnitude of sheet resistance, from 90 kΩ sq−1 to 12 Ω sq−1, while keep transmittance of about 92% at 550 nm.
Unique Co3O4@NiCo2O4 sheets-in-cage hybrid nanoparticles are successfully fabricated through a template-assisted method. When evaluated as an anode material, they exhibit highly enhanced electro-chemical properties for lithium storage.
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