Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO2 film under bipolar pulsed-field operation. High field cycling causes a "wake-up" in virgin "pinched" polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up

Novel environment-friendly NaNbO3-based lead-free ceramics with ultrahigh energy storage density and power density for multilayer ceramic capacitor applications.

Excellent energy storage properties were achieved in NaNbO3-based ceramics by enhancing antiferroelectricity and constructing local random field simultaneously.

Articles you may be interested inTemperature-dependent energy storage properties of antiferroelectric Pb0.96La0.04Zr0.98Ti0.02O3 thin films Appl. Phys. Lett.

Published by the AIP PublishingArticles you may be interested in Effect of composition on the pressure-driven ferroelectric to antiferroelectric phase transformation behavior of (Pb0.97La0.02)(Zr1−x−ySnxTiy)O3 ceramics J. Appl. Phys. 116, 074107 (2014); 10.1063/1.4893372 Temperature-dependent energy storage properties of antiferroelectric Pb0.96La0.04Zr0.98Ti0.02O3 thin films Appl. Phys. Lett. The A-site driven phase transition procedure of (Pb0.97La0.02)(Zr0.42Sn0.40Ti0.18)O3 ceramics: An evidence from electronic structure variation Appl. Phys. Lett. 103, 192910 (2013); 10.1063/1.4829757 Enhanced polarization switching and energy storage properties of Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films with LaNiO3 oxide top electrodes

No abstract

HfO2-based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2E(c)), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2E(c)), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films

The dielectric properties of BSTO/ Mg 2 SiO 4 / MgO composite ceramics have been investigated systematically. The dielectric properties of BSTO composites under a dc bias field can be interpreted by the "soft-mode" theory near the phase transition and Johnson's phenomenological equation far above the transition temperature. Compared with most of the other BSTO composite ceramics, BSTO/ Mg 2 SiO 4 / MgO not only can be sintered at a lower temperature but also keep a higher dielectric tunability versus a lower dielectric constant. For example, BSTO/ 35 wt. % Mg 2 SiO 4 / 15 wt. % MgO has a dielectric tunability ϳ13.18% ͑under 2 kV/ mm biasing͒ versus a dielectric constant r͑0͒ ϳ 118.40 at 25°C. It suggests that the dielectric properties are influenced to a great extent by the microstructure, and the dielectric tunability is enhanced when more continuous BSTO phase is obtained.