Enhancement of energy storage in epitaxial PbZrO3 antiferroelectric films using strain engineering

Abstract

Articles you may be interested inTemperature-dependent energy storage properties of antiferroelectric Pb0.96La0.04Zr0.98Ti0.02O3 thin films Appl. Phys. Lett.

Dynamic hysteresis and scaling behavior in epitaxial antiferroelectric film

“…Epitaxial relation with substrate was confirmed by XRD φ scan. (Details of the structure information can be found elsewhere [14].) In order to make the electric experiments, LNO top electrode (diameter of ~140 μm) was deposited by RF magnetron sputtering at RT through a photolithography process.…”

Temperature-dependent stability of energy storage properties of Pb0.97La0.02(Zr0.58Sn0.335Ti0.085)O3 antiferroelectric ceramics for pulse power capacitors

“…Also, as pulse power capacitors are always needed to operate in different or constantly changing temperature environment, a good energy storage stability in a wide temperature range (for example, À50-150 C) is a must to ensure its reliable operation. Recently, a weakly temperature-dependent recoverable energy density (W re ) of over 10 J/cm 3 was realized on Pb 0.96 La 0.04 Zr 0.98 Ti 0.02 O 3 AFE thin films by Hu et al 9 Moreover, Ge et al 10 and Wang et al 11 also achieved a good temperature stability of energy density on PbZrO 3 and Pb 0.97 La 0.02 (Zr 0.98 Ti 0.02 )O 3 AFE thick films, respectively. As for AFE bulk ceramics, Gao et al 12 reported 0.89Bi 0.5 Na 0.5 TiO 3 -0.06BaTiO 3 -0.05 K 0.5 Na 0.5 NbO 3 ceramics that possess good independence of temperature in the stable AFE region.…”

Nonequilibrium polarization dynamics in antiferroelectrics

“…Antiferroelectrics display a field induced transition from antipolar to polar dielectric, and they have interesting properties such as the double hysteresis loop and large strains associated with it. These unique properties make antiferroelectric materials very attractive for technological applications involving high-energy supercapacitors [4][5][6][7][8], electrocaloric cooling [9], actuators [10], photovoltaic effects [11], and many other interesting dielectric phenomena. Very recently, experimental evidence of a novel four-state nonvolatile memory effect in antiferroelectrics was reported [12].…”