Cost-effective electrocatalysts for the oxygen evolution reaction (OER) are critical to energy conversion and storage processes. A novel strategy is used to synthesize a non-noble-metal-based electrocatalyst of the OER by finely combining layered FeNi double hydroxide that is catalytically active and electric conducting graphene sheets, taking advantage of the electrostatic attraction between the two positively charged nanosheets. The synergy between the catalytic activity of the double hydroxide and the enhanced electron transport arising from the graphene resulted in superior electrocatalytic properties of the FeNi-GO hybrids for the OER with overpotentials as low as 0.21 V, which was further reduced to 0.195 V after the reduction treatment. Moreover, the turnover frequency at the overpotential of 0.3 V has reached 1 s(-1), which is much higher than those previously reported for non-noble-metal-based electrocatalysts.
We
report on the synthesis of iron-nickel sulfide (INS) ultrathin
nanosheets by topotactic conversion from a hydroxide precursor. The
INS nanosheets exhibit excellent activity and stability in strong
acidic solutions as a hydrogen evolution reaction (HER) catalyst,
lending an attractive alternative to the Pt catalyst. The metallic
α-INS nanosheets show an even lower overpotential of 105 mV
at 10 mA/cm2 and a smaller Tafel slope of 40 mV/dec. With
the help of DFT calculations, the high specific surface area, facile
ion transport and charge transfer, abundant electrochemical active
sites, suitable H+ adsorption, and H2 formation
kinetics and energetics are proposed to contribute to the high activity
of the INS ultrathin nanosheets toward HER.
Hybrid organic/inorganic perovskite solar cells have been rapidly evolving with spectacular successes in both nanostructured and thin-film versions. Herein, we report the use of a simple sol-gel-processed NiO nanocrystal (NC) layer as the hole-transport layer in an inverted perovskite solar cell. The thin NiO NC film with a faceted and corrugated surface enabled the formation of a continuous and compact layer of well-crystallized CH3 NH3 PbI3 in a two-step solution process. The hole-extraction and -transport capabilities of this film interfaced with the CH3 NH3 PbI3 film were higher than those of organic PEDOT:PSS layers. The cell with a NiO NC film with a thickness of 30-40 nm exhibited the best performance, as a thinner layer led to a higher leakage current, whereas a thicker layer resulted in a higher series resistance. With the NiO film, we observed a cell efficiency of 9.11 %, which is by far the highest reported for planar perovskite solar cells based on an inorganic hole-extracting layer.
Multilayered graphene and single-layered graphene are assembled onto perovskite films in the form of Schottky junctions and ohmic contacts, respectively, for the production of a graphene-based hole transporting material-free perovskite solar cell. Multilayered graphene extracts charge selectively and efficiently, delivering a higher efficiency of 11.5% than single-layered graphene (6.7%).
Hybrid organic/inorganic perovskite solar cells have been rapidly evolving with spectacular successes in both nanostructured and thin-film versions. Herein, we report the use of a simple sol-gel-processed NiO nanocrystal (NC) layer as the hole-transport layer in an inverted perovskite solar cell. The thin NiO NC film with a faceted and corrugated surface enabled the formation of a continuous and compact layer of well-crystallized CH 3 NH 3 PbI 3 in a two-step solution process. The hole-extraction and -transport capabilities of this film interfaced with the CH 3 NH 3 PbI 3 film were higher than those of organic PEDOT:PSS layers. The cell with a NiO NC film with a thickness of 30-40 nm exhibited the best performance, as a thinner layer led to a higher leakage current, whereas a thicker layer resulted in a higher series resistance. With the NiO film, we observed a cell efficiency of 9.11 %, which is by far the highest reported for planar perovskite solar cells based on an inorganic hole-extracting layer.
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