enhanced device performance. [3b] Besides, 2D perovskite also has been deposited by cation exchange or spin-casting onto CH 3 NH 3 PbI 3 crystalline films as a capping layer to improve device stability. [4] To our knowledge, however, such as capping layer has always imposed a significant barrier to charge transfer due to the quantum-confined energy level structure of 2D perovskite. [3a,b] Herein, we developed a solution process based in situ growth route, which allowed us to form a 2D capping layer together with 3D perovskite, essentially a 3D-2D graded interface. Remarkably, the 3D-2D graded perovskite layer was made atomically sharp at the near surface by using such a simple in situ growth process. More importantly, that dimensionally graded layer advantageously modified the interface energy level, consequently reduced the charge recombination at a perovskite/phenyl-C 61 -butyric acid methyl ester (PCBM) interface, and at the same time facilitated the interfacial charge transfer. This innovation has led to a pronounced promotion of the performance of NiO based p-i-n solar cells, with V oc reaching up to 1.17 V, which is among the highest for triiodide perovskite on NiO, alongside J sc of 21.80 mA cm −2 and FF of 0.78, resulting in an overall PCE of 19.89%. More than expected, the large hydrophobic groups at the interface as well as the grain boundaries tremendously enhanced the device ambient stability; our design of the graded layer not only enhanced moisture stability by abating water penetration but also improved thermal stability by suppressing the cross-layer ion migration. Figure 1A shows schematically the deposition method of the (CH 3 NH 3 PbI 3 -PEA 2 Pb 2 I 4 ) 3D-2D graded perovskite film. The deposition process is based on the solvent engineering method but with a key modification: [5] Phenethylammonium iodide (PEAI)/toluene solution was used instead of pure toluene for the solvent dripping process prior to conversion to a crystallized perovskite film by annealing at 95 °C. To facilitate comparison, three kinds of perovskite films were deposited under different conditions as shown in Table 1. In brief, the 3D-2D Graded sample was fabricated by the method mentioned above, while the 3D sample was deposited by the conventional toluene dripping process, and the 2D sample was made simply 2D halide perovskite materials have shown great advantages in terms of stability when applied in a photovoltaic device. However, the impediment of charge transport within the layered structure drags down the device performance. Here for the first time, a 3D-2D (MAPbI 3 -PEA 2 Pb 2 I 4 ) graded perovskite interface is demonstrated with synergistic advantages. In addition to the significantly improved ambient stability, this graded combination modifies the interface energy level in such a way that reduces interface charge recombination, leading to an ultrahigh V oc at 1.17 V, a record for NiO-based p-i-n photovoltaic devices. Moreover, benefiting from the graded structure induced continuously upshifts energy level, th...