Profiling the organic cation-dependent degradation of organolead halide perovskite solar cells

Zhang, Teng; Meng, Xianwei; Yang, Bai; Xiao, Shuang; Hu, Chen; Yang, Yinglong; Chen, Haining

doi:10.1039/c6ta09687e

Cited by 164 publications

(172 citation statements)

References 51 publications

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“…All the samples were stored at ambient environmental conditions (at room temperature and relative humidity of about 30%) without encapsulation. [32][33][34] In both scenarios, metal iodide formation is induced, which degrades the electrical conductivity of the electrode. In contrast, the c-AZO buffer layer seems to protect AgNW from initial chemical damage.…”

Section: Resultsmentioning

confidence: 99%

All‐Solution‐Processed Silver Nanowire Window Electrode‐Based Flexible Perovskite Solar Cells Enabled with Amorphous Metal Oxide Protection

Lee

Ahn

Kwon

et al. 2017

Advanced Energy Materials

119

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Silver nanowire (AgNW)‐based transparent electrodes prepared via an all‐solution‐process are proposed as bottom electrodes in flexible perovskite solar cells (PVSCs). To enhance the chemical stability of AgNWs, a pinhole‐free amorphous aluminum doped zinc oxide (a‐AZO) protection layer is deposited on the AgNW network. Compared to its crystalline counterpart (c‐AZO), a‐AZO substantially improves the chemical stability of the AgNW network. For the first time, it is observed that inadequately protected AgNWs can evanesce via diffusion, whereas a‐AZO secures the integrity of AgNWs. When an optimally thick a‐AZO layer is used, the a‐AZO/AgNW/AZO composite electrode exhibits a transmittance of 88.6% at 550 nm and a sheet resistance of 11.86 Ω sq−1, which is comparable to that of commercial fluorine doped tin oxide. The PVSCs fabricated with a configuration of Au/spiro‐OMeTAD/CH3NH3PbI3/ZnO/AZO/AgNW/AZO on rigid and flexible substrates can achieve power conversion efficiencies (PCEs) of 13.93% and 11.23%, respectively. The PVSC with the a‐AZO/AgNW/AZO composite electrode retains 94% of its initial PCE after 400 bending iterations with a bending radius of 12.5 mm. The results clearly demonstrate the potential of AgNWs as bottom electrodes in flexible PVSCs, which can facilitate the commercialization and large‐scale deployment of PVSCs.

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Section: Resultsmentioning

confidence: 99%

All‐Solution‐Processed Silver Nanowire Window Electrode‐Based Flexible Perovskite Solar Cells Enabled with Amorphous Metal Oxide Protection

Lee

Ahn

Kwon

et al. 2017

Advanced Energy Materials

119

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“…[39][40][41][42][43] We profiled the perovskite solar cell stacks incorporating [60]PCBM or PDI-EH layers before and after indoor illumination within 30 h. The power conversion efficiency (PCE) of investigated devices with the [60]PCBM layer decreased almost completely to zero after aging, while the cells comprising PDI-EH aged under the same conditions sustained their initial performance (Table S1, Supporting Information). [39][40][41][42][43] We profiled the perovskite solar cell stacks incorporating [60]PCBM or PDI-EH layers before and after indoor illumination within 30 h. The power conversion efficiency (PCE) of investigated devices with the [60]PCBM layer decreased almost completely to zero after aging, while the cells comprising PDI-EH aged under the same conditions sustained their initial performance (Table S1, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

Effect of Electron‐Transport Material on Light‐Induced Degradation of Inverted Planar Junction Perovskite Solar Cells

Akbulatov

Frolova

Griffin

et al. 2017

Advanced Energy Materials

115

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This paper presents a systematic study of the influence of electron‐transport materials on the operation stability of the inverted perovskite solar cells under both laboratory indoor and the natural outdoor conditions in the Negev desert. It is shown that all devices incorporating a Phenyl C61 Butyric Acid Methyl ester ([60]PCBM) layer undergo rapid degradation under illumination without exposure to oxygen and moisture. Time‐of‐flight secondary ion mass spectrometry depth profiling reveals that volatile products from the decomposition of methylammonium lead iodide (MAPbI3) films diffuse through the [60]PCBM layer, go all the way toward the top metal electrode, and induce its severe corrosion with the formation of an interfacial AgI layer. On the contrary, alternative electron‐transport material based on the perylendiimide derivative provides good isolation for the MAPbI3 films preventing their decomposition and resulting in significantly improved device operation stability. The obtained results strongly suggest that the current approach to design inverted perovskite solar cells should evolve with respect to the replacement of the commonly used fullerene‐based electron‐transport layers with other types of materials (e.g., functionalized perylene diimides). It is believed that these findings pave a way toward substantial improvements in the stability of the perovskite solar cells, which are essential for successful commercialization of this photovoltaic technology.

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“…[48,49,51,52] Figure 5a shows topological atomic force microscopy images of 10 × 10 µm 2 HP films. Because of the electrochemically active Ag bottom electrodes, ultrathin PMMA layers (≈30 nm) were deposited between the Ag bottom electrodes and HP films to prevent a reaction, resulting in the formation of AgI layer.…”

Section: Conduction and Switching Mechanismmentioning

confidence: 99%

Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI₃, Orthorhombic RbPbI₃, and Their Mixtures

Lee

Choi

Jeon

et al. 2018

Adv Elect Materials

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exhibit low-operation voltages, reduced power consumption, high on/off ratios, and remarkable mechanical flexibility. [9,16] These outstanding properties are suitable for next-generation resistive switching memories. However, the present HPbased resistive switching memories have critical weaknesses, such as short endurance and poor air-stability. Even though conventional CBRAMs recorded over 10 6 cycles of endurance, halide perovskite based resistive switching devices exhibited around 10 3 cycles of endurance. [17,18] To overcome these limitations, diverse solutions have been reported. One strategy is discovering and synthesizing more stable chemical compositions of HPs. To obtain stable resistive switching properties, various compositions of HPs have been investigated and reported. [19][20][21] Another strategy is adopting a passivation layer on HP films, such as polymethyl methacrylate (PMMA), zinc oxide, and ethylene diamine, so as to isolate the films from the atmosphere and complement their defects. [22][23][24][25] The other strategy is by improving the morphology of the HP films. In this regard, solvent engineering can be employed. By dripping antisolvents, such as toluene, benzene, and chlorobenzene, and adding hydroiodic acid solution as an additive in the precursor solution of HPs, morphologically uniform and high quality HP films [26][27][28][29] can be obtained. Nevertheless, these strategies still could not provide the fundamental solutions to the degradation mechanism, in which the devices are usually stuck in low resistance states (LRS, Figure S1, Supporting Information).We have been interested in the use of HPs for resistive switching devices because HP easily changes its composition and crystalline structure by a certain tolerance factor (t) value. [30,31] The methylammonium lead iodide (MAPbI 3 ) crystalline structure is a pseudocubic structure under ambient conditions. However, the MA + cation of MAPbI 3 in BX 6 octahedral void causes a disordered structure and exhibits hysteresis, which is an important factor in the resistive switching behavior. [32,33] Hence, MAPbI 3 is weak under ambient conditions because of the volatile MA + cation. On the other hand, the RbPbI 3 crystalline structure is orthorhombic, which is extremely stable under ambient conditions because of the less volatile Rb + cation and can be stabilized as a 1DRecently, halide perovskites (HPs), which exhibit resistive switching (RS) behaviors, are proposed as a promising candidate for next-generation memory because of their low power consumption, low cost, and mechanical flexibility. However, HP-based memories have crucial problems related to short endurance and vague switching mechanism. Here, the RS behaviors of switchable methylammonium lead iodide (MAPbI 3 ) and nonswitchable rubidium lead iodide (RbPbI 3 ) mixtures are reported and it is elucidated on the source of the switching phenomena. By controlling the ratio of rubidium iodide (RbI)/ methylammonium iodide (MAI), five compositions of the mixture of RbPbI 3 and MAPbI 3 ...

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Profiling the organic cation-dependent degradation of organolead halide perovskite solar cells

Abstract: Operational stability is one of the main obstacles that may hold back the commercialization of perovskite solar cells (PVSCs).

Cited by 164 publications

References 51 publications

All‐Solution‐Processed Silver Nanowire Window Electrode‐Based Flexible Perovskite Solar Cells Enabled with Amorphous Metal Oxide Protection

All‐Solution‐Processed Silver Nanowire Window Electrode‐Based Flexible Perovskite Solar Cells Enabled with Amorphous Metal Oxide Protection

Effect of Electron‐Transport Material on Light‐Induced Degradation of Inverted Planar Junction Perovskite Solar Cells

Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI₃, Orthorhombic RbPbI₃, and Their Mixtures

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Profiling the organic cation-dependent degradation of organolead halide perovskite solar cells

Abstract: Operational stability is one of the main obstacles that may hold back the commercialization of perovskite solar cells (PVSCs).

Cited by 164 publications

References 51 publications

All‐Solution‐Processed Silver Nanowire Window Electrode‐Based Flexible Perovskite Solar Cells Enabled with Amorphous Metal Oxide Protection

All‐Solution‐Processed Silver Nanowire Window Electrode‐Based Flexible Perovskite Solar Cells Enabled with Amorphous Metal Oxide Protection

Effect of Electron‐Transport Material on Light‐Induced Degradation of Inverted Planar Junction Perovskite Solar Cells

Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI3, Orthorhombic RbPbI3, and Their Mixtures

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Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI₃, Orthorhombic RbPbI₃, and Their Mixtures