Lithium niobate is the archetypical ferroelectric material and the substrate of choice for numerous applications including surface acoustic wave radio frequencies devices and integrated optics. It offers a unique combination of substantial piezoelectric and birefringent properties, yet its lack of optical activity and semiconducting transport hamper application in optoelectronics. Here we fabricate and characterize a hybrid MoS2/LiNbO3 acousto-electric device via a scalable route that uses millimetre-scale direct chemical vapour deposition of MoS2 followed by lithographic definition of a field-effect transistor structure on top. The prototypical device exhibits electrical characteristics competitive with MoS2 devices on silicon. Surface acoustic waves excited on the substrate can manipulate and probe the electrical transport in the monolayer device in a contact-free manner. We realize both a sound-driven battery and an acoustic photodetector. Our findings open directions to non-invasive investigation of electrical properties of monolayer films.

Optoelectronic terahertz modulators, operating by actively tuning metamaterial, plasmonic resonator structures, have helped to unlock a myriad of terahertz applications, ranging from spectroscopy and imaging to communications. At the same time, due to the inherently versatile dispersion properties of metamaterials, they offer unique platforms for studying intriguing phenomena such as negative refractive index and slow light. Active resonance frequency tuning of a metamaterial working in the terahertz regime is achieved by integrating metal coupled resonator arrays with electrically tunable graphene. This metamaterial device exploits coupled plasmonic resonators to exhibit an electromagnetically induced transparency analog, resulting in the splitting of the resonance into coupled hybrid optical modes. By variably dampening one of the resonators using graphene, the coupling condition is electrically modulated and continuous tuning of the metamaterial resonance frequency is achieved. This device, operating

Optoelectronic modulators that operate by the electrical tuning of plasmonic resonator structures have demonstrated fast (>MHz) manipulation of terahertz (THz) radiation for communications, imaging, and spectroscopy applications. Among this class of THz device, chiral metamaterial-based polarization modulators have attracted increasing attention due to the importance of THz polarization control for chemistry, biology, and spectroscopy applications, as well as for THz communication protocols. In this paper, active polarization modulation of a THz quantum cascade laser is demonstrated by the electrical tuning of a 2D chiral metamaterial array. The operating principle of this device is based on an electromagnetically induced transparency analogue, produced by the coupling between a bright resonator and two dark resonators. The orientation of these resonators is such that a radiating electric dipole orthogonal to the incident electric field polarization is induced, causing a rotation of the polarization angle of the transmitted radiation. By variably dampening the dark resonators using graphene, the coupling condition is electrically modulated such that continuous tuning of the transmitted polarization angle is achieved. This device, operating at room temperature, can be readily implemented as a fast, optoelectronic, polarization modulator with a maximum tuning range of 20 degrees at 1.75 THz, with demonstrated reconfiguration speeds of >5 MHz.

Active control of chirality in artificial media such as metamaterials is fundamental in many scientific areas, ranging from research into fundamental optical phenomena to the investigation of novel materials, spectroscopy, and imaging. Precise control of the light polarization states has great importance for light‐matter interaction in chemistry and biology, as media with diverse chiral properties react differently to the incoming polarization of light. In this work an active double layer metamaterial device based on vertically stacked ring resonators is realized by integrating electrostatically tunable graphene as an active element. The device is characterized with a THz time domain spectroscopic system demonstrating an all‐electrical control of circular dichroism and optical activity at ≈2 THz, reporting a tunable ellipticity of 0.55–0.98 and >20° rotation of the plane polarization, respectively, by modifying the conductivity of graphene. Further integration with a narrow frequency quantum cascade laser emitting at ≈1.9 THz, in a crossed polarizer experimental arrangement, realizes an active amplitude modulator, hence highlighting the versatility of this approach. These results represent an important milestone for the investigation of novel concepts in optics and in several applications in the THz range, such as wireless communications and spectroscopy.

Many mid- and far-infrared semiconductor photodetectors rely on a photonic response, when the photon energy is large enough to excite and extract electrons due to optical transitions. Toward the terahertz range with photon energies of a few milli–electron volts, classical mechanisms are used instead. This is the case in two-dimensional electron systems, where terahertz detection is dominated by plasmonic mixing and by scattering-based thermal phenomena. Here, we report on the observation of a quantum, collision-free phenomenon that yields a giant photoresponse at terahertz frequencies (1.9 THz), more than 10-fold as large as expected from plasmonic mixing. We artificially create an electrically tunable potential step within a degenerate two-dimensional electron gas. When exposed to terahertz radiation, electrons absorb photons and generate a large photocurrent under zero source-drain bias. The observed phenomenon, which we call the “in-plane photoelectric effect,” provides an opportunity for efficient direct detection across the entire terahertz range.

The photoelectric effect consists in the photoexcitation of electrons above a potential barrier at a material interface and is exploited for photodetection over a wide frequency range. This three-dimensional process has an inherent inefficiency: photoexcited electrons gain momenta predominantly parallel to the interface, while to leave the material they have to move perpendicular to it. Here, we report on the discovery of an in-plane photoelectric effect occurring within a two-dimensional electron gas. In this purely quantum-mechanical, scattering-free process, photoelectron momenta are perfectly aligned with the desired direction of motion. The "work function" is artificially created and tunable in-situ. The phenomenon is utilized to build a direct terahertz detector, which yields a giant zero-bias photoresponse that exceeds the predictions by known mechanisms by more than 10-fold. This new aspect of light-matter interaction in two-dimensional systems paves the way towards a new class of highly efficient photodetectors covering the entire terahertz range.

We have measured both the current-voltage (I SD -V GS ) and capacitance-voltage (C-V GS ) characteristics of a MoS 2 − LiNbO 3 field effect transistor. From the measured capacitance we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the twodimensional free electron model. This model allows us to fit the measured I SD -V GS characteristics over the entire range of V GS . Combining this experimental result with the measured current-voltage characteristics, we determine the field effect mobility as a function of gate voltage. We show that for our device this improved combined approach yields significantly smaller values (more than a factor of 4) of the electron mobility than the conventional analysis of the current-voltage characteristics only.After the rise of graphene 1-3 , a wide range of twodimensional (2D) materials 4 shifted into focus of fundamental and applied research 5 . One particularly important class of 2D materials are transition metal dichalcogenides (TMDs) 6 . One important representative TMD is molybdenum disulfide, MoS 2 , whose indirect band gap changes to a direct one when its thickness is reduced to one single monolayer 7,8 . The resulting high optical activity and sizable bandgap of ∼ 1.9 eV make this material ideally suited for optoelectronic applications 9 and, thus the optical and electronic properties of MoS 2 and related materials have been investigated intensively in the last years 10 . In particular, field effect transistors (FETs) and logical circuit prototypes have been devised and realized [11][12][13] . In such devices, source and drain contacts are patterned onto the TMD film, and the charge carrier density is controlled by gate contacts. For FET devices, the transport mobility of the charge carriers in the conducting channel is of paramount importance. Here, different approaches exist to derive this key figure for FET devices. The most commonly applied method is to measure the source-drain current I SD as a function of the gate voltage V GS . Then, the field effect mobility µ FE is determined from a tangent to the linear region of the I SD (V GS )-dependence using the following formula known from FET theory:Here, C(V GS )/A is the capacitance per unit area, V SD the source-drain voltage, ∂ISD ∂VGS the slope of the linear a) Electronic region, L the length and w the width of the conducting channel. The intersection of the tangent with the abscissa represents the threshold voltage, V Th . However, this simple FET formula (1) assumes that the mobility is independent of the gate voltage. Moreover, the underlying parallel-plate capacitor model used to quantify the capacitance 11,14 assumes perfectly conducting, infinitely large plates. These assumptions may represent an oversimplification for 2D semiconductors 15,16 . To quantify the capacitance more precisely, Radisavljevic and coworkers 17 followed an indirect approach: the capacitance was determined from the carrier density obtained from Hall effect me...

Photonic engineering of the terahertz emission from a quantum cascade laser (QCL) is fundamental for the exploitation of this unique source in a myriad of applications where it can be implemented, such as spectroscopy, imaging, and sensing. Active control of the frequency, power, polarization, and beam profile has been achieved through a variety of approaches. In particular, the active control of the emitted frequency, which is difficult to determine a priori, has been achieved through the integration of a photonic structure and/or by using external cavity arrangements. In this work, an external cavity arrangement, which implements a metamaterial/graphene optoelectronic mirror as an external feedback element, is proposed and demonstrated. The reflectivity and dispersion properties of the external active mirror were tuned via electrostatically gating graphene. It was possible to electronically reproduce the mode-switch occurring in a QCL emitting ∼2.8 THz by mechanically changing the external cavity length formed by an Au mirror. The external cavity arrangement was investigated and described in the framework of the self-mixing theory. These results open a way for the all-electronic engineering of the QCL emission by the use of a fast reconfigurable external mirror. This approach can uniquely address both power and frequency control, with ∼100 MHz reconfiguration speeds, using an integrated external element. Furthermore, the metamaterial/graphene mirror's strong dispersive properties might be implemented for the active mode locking of THz QCLs. Finally, this approach offers a unique opportunity to study the laser dynamics and mode competition in THz QCLs in the self-mixing feedback regime.