We probe and control the optical properties of emission centers forming in radial heterostructure GaAs-Al 0.3 Ga 0.7 As nanowires and show that these emitters, located in Al 0.3 Ga 0.7 As layers, can exhibit quantum-dot like characteristics. We employ a radio frequency surface acoustic wave to dynamically control their emission energy and occupancy state on a nanosecond timescale. In the spectral oscillations we identify unambiguous signatures arising from both the mechanical and electrical component of the surface acoustic wave. In addition, different emission lines of a single emission center exhibit pronounced anti-correlated intensity oscillations during the acoustic cycle. These arise from a dynamically triggered carrier extraction out of the emission center to a continuum in the radial heterostructure. Using finite element modeling and Wentzel-Kramers-Brillouin theory we identify quantum tunneling as the underlying mechanism. These simulation results quantitatively reproduce the observed switching and show that in our systems these emission centers are spatially separated from the continuum by > 10.5 nm.

Lithium niobate is the archetypical ferroelectric material and the substrate of choice for numerous applications including surface acoustic wave radio frequencies devices and integrated optics. It offers a unique combination of substantial piezoelectric and birefringent properties, yet its lack of optical activity and semiconducting transport hamper application in optoelectronics. Here we fabricate and characterize a hybrid MoS2/LiNbO3 acousto-electric device via a scalable route that uses millimetre-scale direct chemical vapour deposition of MoS2 followed by lithographic definition of a field-effect transistor structure on top. The prototypical device exhibits electrical characteristics competitive with MoS2 devices on silicon. Surface acoustic waves excited on the substrate can manipulate and probe the electrical transport in the monolayer device in a contact-free manner. We realize both a sound-driven battery and an acoustic photodetector. Our findings open directions to non-invasive investigation of electrical properties of monolayer films.

The concept of Fourier synthesis is heavily used in both consumer electronic products and fundamental research. In the latter, pulse shaping is key to dynamically initializing, probing and manipulating the state of classical or quantum systems. In NMR, for instance, shaped pulses have a long-standing tradition and the underlying fundamental concepts have subsequently been successfully extended to optical frequencies and even to the implementation of quantum gate operations. Transferring these paradigms to nanomechanical systems requires tailored nanomechanical waveforms. Here, we report on an additive Fourier synthesizer for nanomechanical waveforms based on monochromatic surface acoustic waves. As a proof of concept, we electrically synthesize four different elementary nanomechanical waveforms from a fundamental surface acoustic wave at f1 ≈ 150 MHz using a superposition of up to three discrete harmonics. We use these shaped pulses to interact with an individual sensor quantum dot and detect their deliberately and temporally modulated strain component via the optomechanical quantum dot response. Importantly, and in contrast to direct mechanical actuation by bulk piezoactuators, surface acoustic waves provide much higher frequencies (>20 GHz; ref. 10) to resonantly drive mechanical motion. Thus, our technique uniquely allows coherent mechanical control of localized vibronic modes of optomechanical crystals, even in the quantum limit when cooled to the vibrational ground state.

Individual self-assembled quantum dots and quantum posts are studied under the influence of a surface acoustic wave. In optical experiments we observe an acoustically induced switching of the occupancy of the nanostructures along with an overall increase of the emission intensity. For quantum posts, switching occurs continuously from predominantly charged excitons (dissimilar number of electrons and holes) to neutral excitons (same number of electrons and holes) and is independent of whether the surface acoustic wave amplitude is increased or decreased. For quantum dots, switching is nonmonotonic and shows a pronounced hysteresis on the amplitude sweep direction. Moreover, emission of positively charged and neutral excitons is observed at high surface acoustic wave amplitudes. These findings are explained by carrier trapping and localization in the thin and disordered two-dimensional wetting layer on top of which quantum dots nucleate. This limitation can be overcome for quantum posts where acoustically induced charge transport is highly efficient in a wide lateral matrix-quantum well.

We study the carrier injection into a single InGaAs/GaAs quantum dot regulated by a radio frequency surface acoustic wave. We find that the time of laser excitation during the acoustic cycle programs both the emission intensities and time of formation of neutral (X 0 ) and negatively charged (X − ) excitons. We identify underlying, characteristic formation pathways of both few-particle states in the time-domain experiments and show that both exciton species can be formed either with the optical pump or at later times by injection of single electrons and holes "surfing" the acoustic wave. All experimental observations are in excellent agreement with calculated electron and hole trajectories in the plane of the two-dimensional wetting layer which is dynamically modulated by the acoustically induced piezoelectric potentials. Taken together, our findings provide insight on both the onset of acousto-electric transport of electrons and holes and their conversion into the optical domain after regulated injection into a single quantum dot emitter. arXiv:1306.5954v1 [cond-mat.mes-hall]

A versatile stroboscopic technique based on active phase-locking of a surface acoustic 12 wave to picosecond laser pulses is used to monitor dynamic acoustoelectric effects. 13 Time-integrated multi-channel detection is applied to probe the modulation of the 14 emission of a quantum well for different frequencies of the surface acoustic wave. For 15 quantum posts we resolve dynamically controlled generation of neutral and charged 16 excitons and preferential injection of holes into localized states within the nanostruc-17 ture.18

Piezoelectric surface acoustic waves are employed to induce radio frequency spatiotemporal dynamics of photogenerated electrons and holes in the GaAs core of individual GaAs/AlGaAs core/shell semiconductor nanowires. Comparison of the time-dependent interband optical recombination to numerical simulations allow to determine the charge carrier transport mobilities of electrons, μe = 500–250 +500 cm2/(V s), holes, μh = 50–30 +50 cm2/(V s) and their ratio μe:μh = (20 ± 5):1. Our method probes carrier transport at low carrier density. Thus, the obtained values represent the native material limit of these nanowires, determined by their structural properties. We show that for near-pristine nanowires, individual twin defects do not significantly affect electrical transport, in strong contrast to polytypic nanowires. In the acoustoelectrically modulated emission, we observe unambiguous signatures of (i) hole localization within long wurtzite-rich segments and (ii) electrons in zinc blende regions being reflected at the interface to a wurtzite-rich region. The experimentally observed periodic emission bursts are faithfully reproduced by advanced numerical simulations which include static band edge discontinuities between a single wurtzite segment in an otherwise pure zinc blende nanowire. Otherwise using the same input parameters as for near-pristine zinc blende nanowires, we can deduce from our simulations a minimum conduction band offset of ΔE C ≈ 20 meV at the interface between the zinc blende part and the wurtzite-rich region. These results furthermore confirm that a single wurtzite segment with sufficiently large band offsets efficiently traps holes and blocks electron transport.

Abstract.The excitonic occupancy state of a single, nanowire-based, heterostructure quantum dot is dynamically programmed by a surface acoustic wave. The quantum dot is formed by an interface or thickness fluctuation of a GaAs QW embedded in a AlGaAs shell of a GaAs − AlGaAs core-shell nanowire. As we tune the time at which carriers are photogenerated during the acoustic cycle, we find pronounced intensity oscillations of neutral and negatively charged excitons. At high acoustic power levels these oscillations become anticorrelated which enables direct acoustic programming of the dot's charge configuration, emission intensity and emission wavelength. Numerical simulations confirm that the observed modulations arise from acoustically controlled modulations of the electron and electron-hole-pair concentrations at the position of the quantum dot.