Radio frequency occupancy state control of a single nanowire quantum dot

Weiß, Matthias; Schülein, Florian J. R.; Kinzel, Jörg B.; Heigl, Michael; Rudolph, Daniel; Bichler, Max; Abstreiter, G.; Finley, Jonathan J.; Wixforth, Achim; Koblmüller, Gregor; Krenner, Hubert J.

doi:10.1088/0022-3727/47/39/394011

Cited by 22 publications

(39 citation statements)

References 56 publications

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“…As we tune ,the XX peak exhibits clear and pronounced sinusoidal spectral oscillations with the SAW period, while the X shows a rather broad emission independent of the SAW phase at which the optical excitation takes place. An acoustically induced periodic modulation of the emission energies similar to the one of the XX transition was reported for QDs [8,9,23,24] and nanocavities [20] in the III-As material system. It was attributed to the deformation potential coupling induced by dynamic SAW strain field.…”

Section: Resultsmentioning

confidence: 61%

“…These concepts were built on schemes that have been previously established for planar semiconductor systems. Compared to all-electrical approaches, which typically require selective doping and sophisticated nanofabricated electrical contacts on individual NWs with sub-micrometer dimensions, the SAW-spectroscopy has proven to be a powerful contactless technique for: the control of acoustoelectrically induced conveyance of charge carriers and dissociated excitons across the NW [4][5][6][7], dynamic programing of NW QD occupancy state [8], precisely timed carrier injection into and extraction from NW QDs for low-jitter single photon emission [6,7], tuning of the NW QD radiative optical transitions by the oscillating strain and piezoelectric SAW fields [9,10], as well as coherent control of NW-based nanophotonic resonators [11]. Because the SAWs propagate at the speed of sound, their wavelengths in semiconductor heterostructures are typically in the micrometer and sub-micrometer range, thus covering acoustic frequencies from several tens of megahertz up to the gigahertz range.…”

Section: Introductionmentioning

confidence: 99%

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Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures

Lazić

Chernysheva

Hernández-Mínguez

et al. 2018

J. Phys. D: Appl. Phys.

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We report on experimental studies of the effects induced by surface acoustic waves on the optical emission dynamics of GaN/InGaN nanowire quantum dots. We employ stroboscopic optical excitation with either time-integrated or time-resolved photoluminescence detection. In the absence of the acoustic wave, the emission spectra reveal signatures originated from the recombination of neutral exciton and biexciton confined in the probed nanowire quantum dot. When the nanowire is perturbed by the propagating acoustic wave, the embedded quantum dot is periodically strained and its excitonic transitions are modulated by the acousto-mechanical coupling. Depending on the recombination lifetime of the involved optical transitions, we can resolve acoustically driven radiative processes over time scales defined by the acoustic cycle. At high acoustic amplitudes, we also observe distortions in the transmitted acoustic waveform, which are reflected in the time-dependent spectral response of our sensor quantum dot. In addition, the correlated intensity oscillations observed during temporal decay of the exciton and biexciton emission suggest an effect of the acoustic piezoelectric fields on the quantum dot charge population. The present results are relevant for the dynamic spectral and temporal control of photon emission in III-nitride semiconductor heterostructures.

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Section: Resultsmentioning

confidence: 61%

Section: Introductionmentioning

confidence: 99%

Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures

Lazić

Chernysheva

Hernández-Mínguez

et al. 2018

J. Phys. D: Appl. Phys.

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“…A similar difference in modulation amplitude has been observed (although not discussed) in neutral and charged excitons in AlGaAs-GaAs core-shell nanowires. 36 In summary, we have demonstrated the SAW-driven modulation of the optical emission of a single GaN/InGaN nanowire-QD. We show that the acousto-mechanical coupling shifts the QD energy levels giving rise to a characteristic splitting (up to 1.5 meV) of the excitonic transition energies.…”

Section: -mentioning

confidence: 81%

Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

et al. 2015

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The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ~330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.Surface acoustic waves induce periodic strain and piezoelectric fields near a semiconductor surface which can dynamically modify their basic properties. The use of SAWs is an expanding research field, which has been widely applied to semiconductor quantum wells (QWs) 1-3 , wires 4-6 and dots (QDs) [7][8][9][10][11] .By controlling the excitonic emission in III-V semiconductor QDs by SAWs, high repetition rate single photon sources (SPSs) 7-9 and periodic laser mode feeding 12 have been reported. Also, dynamic control of individual QDs 11 and on-demand single-electron transfer between distant quantum dots 13 have been demonstrated. In a more general context, a proposal for onchip quantum transducers based on SAWs enabling long-range coupling of many qubits has been recently put forward 14 . In addition to the band-edge modulation, which determines the QD emission wavelength, the tunable strain field of the SAW can be used to modify other properties related to the band structure, as the exciton binding energy, in a similar way as static strain field 15 . While most of the SAW-related work reported in semiconductor structures refers to III-V systems, studies on group III-Nitrides are scarce. Extension of these techniques to group III-Nitride systems is important, as their large gap enables highpower/high-temperature applications and high repetition rate SPSs covering a broad spectral range. Also, the high sound velocities and the stronger electromechanical coupling coefficients of nitrides, as compared to (Al,Ga

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“…Our scheme could be also applied to QD‐molecules to dynamically switch coupling of charge and spin excitation by strain. Furthermore, our scheme can be directly applied to exciton and spin qubits of QD molecules or of optically active defect centers, for which recent proposals promise high fidelity quantum control schemes, or QDs forming in nanowires . Moreover, our work marks a first important step to interface optomechanical crystals with engineered dispersions of phonons and photons and operation frequencies in the GHz domain .…”

mentioning

confidence: 95%

“…This interest has been sparked by theoretical work and hallmark experiments on superconducting qubits . Semiconductor quantum dots (QDs) enable the direct transduction of the SAW phonons’ radio frequencies to the optical frequencies of QD excitonic two‐level system via deformation potential and Stark effect couplings . One of the first applications of SAW envisioned and implemented in QD‐based quantum technologies was the dynamic acoustic pumping and charge state control via the acousto‐electric effect .…”

mentioning

confidence: 99%

Quantum Dot Optomechanics in Suspended Nanophononic Strings

et al. 2019

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The optomechanical coupling of quantum dots and flexural mechanical modes is studied in suspended nanophononic strings. The investigated devices are designed and monolithically fabricated on an (Al)GaAs heterostructure. Radio frequency elastic waves with frequencies ranging between f=250 and 400 MHz are generated as Rayleigh surface acoustic waves on the unpatterned substrate and injected as Lamb waves in the nanophononic string. Quantum dots inside the nanophononic string exhibit a 15‐fold enhanced optomechanical modulation compared to those dynamically strained by the Rayleigh surface acoustic wave. Detailed finite element simulations of the phononic mode spectrum of the nanophononic string confirm that the observed modulation arises from valence band deformation potential coupling via shear strain. The corresponding optomechanical coupling parameter is quantified to 0.15meVnnormalm−1. This value exceeds that reported for vibrating nanorods by approximately one order of magnitude at 100 times higher frequencies. Using this value, a derived vertical displacement in the range of 10 nm is deduced from the experimentally observed modulation. The results represent an important step toward the creation of large scale optomechanical circuits interfacing single optically active quantum dots with optical and mechanical waves.

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Radio frequency occupancy state control of a single nanowire quantum dot

Cited by 22 publications

References 56 publications

Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures

Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures

Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

Quantum Dot Optomechanics in Suspended Nanophononic Strings

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