We probe and control the optical properties of emission centers forming in radial heterostructure GaAs-Al 0.3 Ga 0.7 As nanowires and show that these emitters, located in Al 0.3 Ga 0.7 As layers, can exhibit quantum-dot like characteristics. We employ a radio frequency surface acoustic wave to dynamically control their emission energy and occupancy state on a nanosecond timescale. In the spectral oscillations we identify unambiguous signatures arising from both the mechanical and electrical component of the surface acoustic wave. In addition, different emission lines of a single emission center exhibit pronounced anti-correlated intensity oscillations during the acoustic cycle. These arise from a dynamically triggered carrier extraction out of the emission center to a continuum in the radial heterostructure. Using finite element modeling and Wentzel-Kramers-Brillouin theory we identify quantum tunneling as the underlying mechanism. These simulation results quantitatively reproduce the observed switching and show that in our systems these emission centers are spatially separated from the continuum by > 10.5 nm.

We report on optical experiments performed on individual GaAs nanowires and the manipulation of their temporal emission characteristics using a surface acoustic wave. We find a pronounced, characteristic suppression of the emission intensity for the surface acoustic wave propagation aligned with the axis of the nanowire. Furthermore, we demonstrate that this quenching is dynamical as it shows a pronounced modulation as the local phase of the surface acoustic wave is tuned. These effects are strongly reduced for a SAW applied in the direction perpendicular to the axis of the nanowire due to their inherent one-dimensional geometry. We

Piezoelectric surface acoustic waves are employed to induce radio frequency spatiotemporal dynamics of photogenerated electrons and holes in the GaAs core of individual GaAs/AlGaAs core/shell semiconductor nanowires. Comparison of the time-dependent interband optical recombination to numerical simulations allow to determine the charge carrier transport mobilities of electrons, μe = 500–250 +500 cm2/(V s), holes, μh = 50–30 +50 cm2/(V s) and their ratio μe:μh = (20 ± 5):1. Our method probes carrier transport at low carrier density. Thus, the obtained values represent the native material limit of these nanowires, determined by their structural properties. We show that for near-pristine nanowires, individual twin defects do not significantly affect electrical transport, in strong contrast to polytypic nanowires. In the acoustoelectrically modulated emission, we observe unambiguous signatures of (i) hole localization within long wurtzite-rich segments and (ii) electrons in zinc blende regions being reflected at the interface to a wurtzite-rich region. The experimentally observed periodic emission bursts are faithfully reproduced by advanced numerical simulations which include static band edge discontinuities between a single wurtzite segment in an otherwise pure zinc blende nanowire. Otherwise using the same input parameters as for near-pristine zinc blende nanowires, we can deduce from our simulations a minimum conduction band offset of ΔE C ≈ 20 meV at the interface between the zinc blende part and the wurtzite-rich region. These results furthermore confirm that a single wurtzite segment with sufficiently large band offsets efficiently traps holes and blocks electron transport.

Organic light-emitting diodes (OLEDs) usually exhibit a low light outcoupling efficiency because a large fraction of power is lost to surface plasmons (SPs) and waveguide modes. In this paper it is demonstrated that periodic grating structures with almost µm-scale can be used to extract SPs as well as waveguide modes and therefore enhance the outcoupling efficiency in light-emitting thin film structures. The gratings are fabricated by nanoimprint lithography using a commercially available diffraction grating as a mold which is pressed into a polymer resist. The outcoupling of SPs and waveguide modes is detected in fluorescent organic films adjacent to a thin metal layer in angular dependent photoluminescence measurements. Scattering up to 5th-order is observed and the extracted modes are identified by comparison to the SP and waveguide dispersion obtained from optical simulations. In order to demonstrate the low-cost, high quality and large area applicability of grating structures in optoelectronic devices, we also present SP extraction using a grating structure fabricated by a common DVD stamp.